Abstract:In this review, the main advances on CDs‐based memristors and their state‐of‐the‐art applications in artificial synapse, neuromorphic computing, and human sensory perception systems are summarized. The structure–property relationship and resistive switching mechanism of CDs are discussed in depth. This work provides instructive guidance to prepare high‐quality CDs and gives some promising application scenarios for memristors‐based neuromorphic sensor and vision. In the era of big data and artificial intelligence (AI), advanced data storage and processing technologies are in urgent demand. The innovative neuromorphic algorithm and hardware based on memristor devices hold a promise to break the von Neumann bottleneck. In recent years, carbon nanodots (CDs) have emerged as a new class of nano‐carbon materials, which have attracted widespread attention in the applications of chemical sensors, bioimaging, and memristors. The focus of this review is to summarize the main advances of CDs‐based memristors, and their state‐of‐the‐art applications in artificial synapses, neuromorphic computing, and human sensory perception systems. The first step is to systematically introduce the synthetic methods of CDs and their derivatives, providing instructive guidance to prepare high‐quality CDs with desired properties. Then, the structure–property relationship and resistive switching mechanism of CDs‐based memristors are discussed in depth. The current challenges and prospects of memristor‐based artificial synapses and neuromorphic computing are also presented. Moreover, this review outlines some promising application scenarios of CDs‐based memristors, including neuromorphic sensors and vision, low‐energy quantum computation, and human–machine collaboration.

Recent advancements in carbon-based materials for resistive switching applications

Recent Advances in Resistive Switching Materials and Devices: from Memories to Memristors

Recent Advances and Future Prospects for Memristive Materials, Devices, and Systems

A carbon conductive filament-induced robust resistive switching behavior for brain-inspired computing

Overview of amorphous carbon memristor device, modeling, and applications for neuromorphic computing

Novel 2D MXene-based materials in memristors: fundamentals, resistive switching properties and applications

Memristor Based on Inorganic and Organic Two-Dimensional Materials: Mechanisms, Performance, and Synaptic Applications

Carbon-based Memristors for RRAM and Neuromorphic Applications

Nonvolatile Resistive Switching Memories-Characteristics, Mechanisms and Challenges

Recent advances on crystalline materials-based flexible memristors for data storage and neuromorphic applications

Recent Progress in Solution‐Based Metal Oxide Resistive Switching Devices

Hybridization state transition-driven carbon quantum dot (CQD)-based resistive switches for bionic synapses

Carbon Nanodots Memristor: An Emerging Candidate toward Artificial Biosynapse and Human Sensory Perception System

Memristors Based on 2D Materials as an Artificial Synapse for Neuromorphic Electronics

Review—Exploring Emerging Materials for Memristor Fabrication: A Review of Recent Progress

Recent advances in memristors based on two-dimensional ferroelectric materials

Resistive Switching Materials for Information Processing

Solid-State Electrochemical Process and Performance Optimization of Memristive Materials and Devices

Resistive Memory Devices at the Thinnest Limit: Progress and Challenges

Electronic and Photoelectronic Memristors Based on 2D Materials

Interface Engineering Enables Multilevel Resistive Switching in Ultra-Low-Power Chemobrionic Copper Silicate