Abstract:Graphene Hall elements (GHEs) have been demonstrated to be promising magnetic field sensors with excellent sensitivity, linearity, temperature stability, and compatibility with complementary-metal-oxide-semiconductor (CMOS)-integrated circuits (ICs). However, the demonstrated GHEs have still not exhibited a comprehensive advantage in performance over commercial integrated Hall sensors which were implemented in integrated Hall element and CMOS processing ICs. In this work, we develop a technology for the three-dimensional (3D) heterogeneous integration of silicon-based CMOS ICs and GHEs, and the fabricated magnetic field sensors outperform commercial high-end integrated Hall sensors. Specifically, the integrated Hall sensors are implemented in a stacked integration on Si based on a chopper programmable-gain amplifier (CPGA), a chopper-stabilized second-order sigma-delta modulator (CSDM), and graphene-based Hall elements on monochips. GHEs with high sensitivity (up to 1000 A/VT) are fabricated with a compatible process on a smoothened silicon nitride passivation layer of silicon-based CMOS ICs, and the two device layers are connected by an interlayer. The heterogeneous integrated Hall ICs exhibit current and voltage magnetic sensitivities up to 64 000 A/VT and 6.12 V/VT, respectively, which are much higher than those in all other reported nanomaterial-based Hall sensors and even in high-end commercial Hall ICs. Furthermore, the 3D heterogeneous integration technology used here can be extended as a universal technology for integrating nanomaterial-based sensors and Si CMOS ICs.

Exploring the Performance of Hall Sensor With Substrate Bias Modulation in SOI Process

A New Design of a Single-Device 3D Hall Sensor: Cross-Shaped 3D Hall Sensor

Design of CMOS magnetic sensor integrated circuit

Modeling of Three-Axis Hall Effect Sensor Based on CMOS Process

A highly sensitive CMOS digital Hall sensor for low magnetic field applications

A CMOS Front-End Hall Sensor Microsystem for Linear Magnetic Field Measurement With Best Tradeoff Between Sensitivity and SNR

Physical Investigations on Bias-Free, Photo-Induced Hall Sensors Based on Pt/GaAs and Pt/Si Schottky Junctions

A 3-D GaAs-based Hall Sensor Design With Dual Active Layers Structure

Effects of Hall Output Probes Shape on Magnetic Characterization of Hall Magnetic Field Sensor Based on MOSFET

A CMOS Hall sensor modeling with readout circuitry and microcontroller processing for magnetic detection

Characteristics Research of Hall Magnetic Sensor Based on Nano-Polysilicon Thin Film Transistors

Simulation and optimization of conductor structural parameters of free-space hall-effect current sensor

A New Design of a CMOS Vertical Hall Sensor with a Low Offset

Optimization of integrated hall sensor

Influences of an Aluminum Covering Layer on the Performance of Cross-Like Hall Devices

Inverted Pyramid 3-axis Silicon Hall Effect Magnetic Sensor With Offset Cancellation

Performance Comparison Of Cross-Like Hall Plates With Different Covering Layers

Ultrasensitive Magnetic Sensors Enabled by Heterogeneous Integration of Graphene Hall Elements and Silicon Processing Circuits.

Frequency selectivity of spin Hall magnetoresistance sensor and its applications in eddy current testing

Orientation dependence of the pseudo-Hall effect in p-type 3C–SiC four-terminal devices under mechanical stress

A Hall Sensor Microsystem for Current Measurement Used in Watt-Hour Meter.