Design of CMOS magnetic sensor integrated circuit

Qing Guo,DaZhong Zhu,Yunruo Yao
DOI: https://doi.org/10.1109/icsict.2004.1435165
2004-01-01
Abstract:A new CMOS magnetic sensor integrated circuit has been developed in a 0.6μm CMOS technology. The single chip integration of the split-drain magnetic field-effect transistor (MAGFET) and the subsequent signal processing circuits is realized. With the pre-processing circuit and correlated double sampling (CDS) circuits, the fixed pattern noise (FPN) is greatly reduced. The MAGFET is sectorial with the radius of 48μm and the angle of 90 degree. The relative sensitivity of the magnetic sensor can be 87.3mV/(T·μs). © 2004 IEEE.
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