A CMOS Sectorial Split-Drain Magnetic Sensor IC

Qing GUO,Dazhong ZHU,Yunruo YAO
DOI: https://doi.org/10.3969/j.issn.1000-3819.2006.01.021
2006-01-01
Abstract:The CMOS magnetic sensor integrated circuit with sectorial split-drain magnetic field-effect transistor (MAGFET) is designed and developed in a 0. 6 μm standard CMOS technology. The design is consisted of the sectorial split-drain magnetic field-effect transistor as the magnetic sensor cell, the pre-processing circuit with two functioning modes, the correlated double sampling (CDS) circuits and the digital controlling circuits. The sensor integrated circuit is designed to realize the measurement of magnetic field, as well as the noise-shaping with the mode of magnetic field shielding, and the noise of the sensor cell and the signal processing circuit is greatly reduced. The sensitivity of the magnetic sensor integrated circuit is 2. 62 V/T at the working frequency of 10 kHz.
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