Quantitatively exploring the effect of a triangular electrode on performance enhancement in a 4H-SiC metal-semiconductor-metal ultraviolet photodetector

Bin Chen,Yintang Yang,ChangChun Chai,Xianjun Zhang
DOI: https://doi.org/10.1088/0256-307X/28/6/068501
2011-01-01
Chinese Physics Letters
Abstract:A model of novel triangular electrode metal-semiconductor-metal (TEMSM) and conventional electrode metal-semiconductor-metal (CEMSM) detectors is established by utilizing the ISE-TCAD simulator. By comparing the simulated results of TEMSM and CEMSM with experimental data, the model validity is verified and the TEMSM detector shows a superiority of a 113% photocurrent increase of 25.4 nA and similar low dark current of 3.16 pA at 30V bias over the CEMSM device. Furthermore, the electrode angle alpha, width W and spacing S are optimized to obtain the enhanced device features including high UV-to-visible rejection ratio and large responsivity, etc. Under 30V bias, the maximum UV-to-visible rejection ratio, comparable responsivity and external quantum efficiency at 310 nm are 13049, 0.1712 A/W and 68.48% for a TEMSM detector with device parameters of alpha = 60 degrees, W = 3 mu m and S = 4 mu m, respectively.
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