Responsivity Surge in MAPbI3:PC61BM/Au/ZnO Sandwich‐Structured Photodetector

Haoda Li,Dayong Jiang,Man Zhao,Yue Zhao,Meijiao Wang,Yanyan Peng,Mingyang Li
DOI: https://doi.org/10.1002/adom.202400007
IF: 9
2024-05-13
Advanced Optical Materials
Abstract:Solving the low gain problem of single transverse electric field in MSM PD and building cross composite electric field to improve carrier transmission efficiency, a new carrier transport control scheme has been proposed. The low gain in the presence of a single transverse external electric field limits the application of metal‐semiconductor‐metal (MSM) photodetectors. Here, a longitudinal built‐in electric field by spin‐coating CH3NH3PbI3:PC61BM on the electrode region of an Au/ZnO MSM photodetector, which constitutes a vertically crossed composite electric field with a transverse external electric field, is constructed. In this case, the transverse electric field collects the electrons, and the longitudinal electric field separates them. Based on this novel electric field structure, carrier multiplication at lower voltage conditions is achieved. Compared to the low voltage, there is a significant amplification effect when the voltage reaches 7 V. The responsivity is increased ≈270 times for UV–vis wavelengths, escalating from ≈0.02 to ≈5.4 A W−1. This study provides a novel carrier transport control scheme for high‐gain perovskite‐based photodetectors.
materials science, multidisciplinary,optics
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