Abstract:The functional diversity of two-dimensional (2D) material devices with simple architectures is ultimately be limited by immature doping techniques. Another alternative is geometry-asymmetric metal-semiconductor-metal structure (GA-MSM), which enables basic function of semiconductor junction such as rectification and photovoltaic detection. Here, the mixed-dimensional van der Waals heterostructures (MDvdWHs) of layered SnxSy are obtained using an aqueous phase exfoliation (APE) method based on the separation and self-assembly of p-type SnS layered nanosheets (NS) and n-type SnS2 quantum dots (QD). With a surface charge transfer doping effect, the current-voltage characterization regulates from thermionic field emission (TFE) to thermionic emission (TE) model, the rectification ratio changing from 0.7 to 3. To explain our experimental results, the generic current transport models GA-MSM have been established based on the TE and TFE theory. The GA-MSM models with TE and TFE mechanism predict an opposite rectification phenomenon which fitting well with our experimental results. A photovoltaic effect is observed for the GA-MSM device, as well as a high responsivity of 35 A W-1 and detectivity of 3.4×1011 cmHz1/2 W-1 are obtained. This study not only provides a novel strategy to design photovoltaic devices with MDvdWHs, but more importantly, we have established the fundamental modelling for rectification behavior of GA-MSM which is attractive for broadening the functional diversity of 2D material devices such as geometry-asymmetric phototransistors and neuromorphic vision devices.

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