Abstract:Organic spintronic devices have been appealing because of the long spin life time of the charge carriers in the organic materials and their low cost, flexibility and chemical diversity. In previous studies, the control of resistance of organic spin valves is generally achieved by the alignment of the magnetization directions of the two ferromagnetic electrodes, generating magnetoresistance. However, interfacial diffusion between magnetic electrodes and organic spacer layers is a serious problem in the organic spintronics which complicates attempts to understand the spin-dependent transport mechanism and hurts the achievement of a desirably high magnetoresistance. In this chapter, we present a technique to deposit nanodots instead of atoms onto the organic layer using buffer layer assist growth. Organic spin valves using this method exhibit a sharper interface and a giant MR of up to similar to 300%. Analysis of the current-voltage characteristics indicates that the spin-dependent carrier injection correlates with the observed MR. Furthermore, we employ a new knob to tune the resistance of organic spin valves by adding a thin ferroelectric interfacial layer between the ferromagnetic electrode and the organic spacer. We show that the resistance can be controlled by not only the spin alignment of the two ferromagnetic electrodes, but also by the electric polarization of the interfacial ferroelectric layer: the MR of the spin valve depends strongly on the history of the bias voltage which is correlated with the polarization of the ferroelectric layer; the MR even changes sign when the electric polarization of the ferroelectric layer is reversed. This new tunability can be understood in terms of the change of relative energy level alignment between ferromagnetic electrode and the organic spacer caused by the electric dipole moment of the ferroelectric layer. These findings enable active control of resistance using both electric and magnetic fields, opening up possibility for multistate organic spin valves and shed light on the mechanism of the spin transport in organic spin valves.

Efficient Spin Injection Into Nonmagnetic Metals Through Low-Resistance Mgo

Magneto-Transport Studies of Fe/Alq(3)/Co Organic Spin-Valves

Organic spintronics: The case of Fe/Alq3/Co spin-valve devices

Tunable Asymmetric Magnetoresistance in an Fe3GeTe2/graphite/Fe3GeTe2 Lateral Spin Valve.

Spin Valve Effect in the Van Der Waals Heterojunction of Fe3GeTe2/tellurene/Fe3GeTe2

Thermal spin injection and interface insensitivity in permalloy/aluminum metallic non-local spin valves

Manipulating Spin Injection into Organic Materials Through Interface Engineering

Effective Nonlocal Spin Injection Through Low-Resistance Oxide Junctions

Spin injection and spin accumulation in all-metal mesoscopic spin valves

Highly Efficient Spin Injection and Readout Across Van Der Waals Interface.

Interface Engineering For Spin Injection, Detection And Manipulation In Alq(3)-Based Organic Spin Valves

Negative Spin Valve effects in manganite/organic based devices

Magnon Valve Effect Between Two Magnetic Insulators.

Conditions for efficient spin injection from a ferromagnetic metal into a semiconductor

Spin valve effect by ballistic transport in ferromagnetic metal (MnAs) / semiconductor (GaAs) hybrid heterostructures

Electrical Spin Injection into Silicon using MgO Tunnel Barrier

Room temperature spin injection study across semi-crystalline PVDF-HFP thin films in PVDF-HFP/NiFe bilayers and Ag/(NiFe or Co)/PVDF-HFP/NiFe spin valves

Magnon detection using a ferroic collinear multilayer spin valve

The In Situ Optimization of Spinterface in Polymer Spin Valve by Electronic Phase Separated Oxides

Electrical spin injection and detection in a semiconductor. Is it feasible?

Electron-magnon spin conversion and magnonic spin pumping in antiferromagnet/heavy metal heterostructure