Abstract:Phase change memory devices are typically reset by melt-quenching a material to radically lower its electrical conductance. The high power and concomitantly high current density required to reset phase change materials is the major issue that limits the access times of 3D phase change memory architectures. Phase change superlattices were developed to lower the reset energy by confining the phase transition to the interface between two different phase change materials. However, the high thermal conductivity of the superlattices means that heat is poorly confined within the phase change material, and most of the thermal energy is wasted to the surrounding materials. Here, we identified Ti as a useful dopant for substantially lowering the thermal conductivity of Sb2Te3-GeTe superlattices whilst also stabilising the layered structure from unwanted disordering. We demonstrate via laser heating that lowering the thermal conductivity by doping the Sb2Te3 layers with Ti halves the switching energy compared to superlattices that only use interfacial phase change transitions and strain engineering. The thermally optimized superlattice has (0 0 l) crystallographic orientation yet a thermal conductivity of just 0.25 W/m.K in the "on" (set) state. Prototype phase change memory devices that incorporate this Ti-doped superlattice switch faster and and at a substantially lower voltage than the undoped superlattice. During switching the Ti-doped Sb2Te3 layers remain stable within the superlattice and only the Ge atoms are active and undergo interfacial phase transitions. In conclusion, we show the potential of thermally optimised Sb2Te3-GeTe superlattices for a new generation of energy-efficient electrical and optical phase change memory.

Al1.3sb3te Material For Phase Change Memory Application

Ga2te3 Phase Change Material For Low-Power Phase Change Memory Application

Atomic Scale Insight into the Effects of Aluminum Doped Sb2Te for Phase Change Memory Application

The Phase Change Memory Features High-Temperature Characteristic Based on Ge-Sb-Se-Te Alloys

Advantages of Ta-Doped Sb3Te1 Materials for Phase Change Memory Applications

Advantages of Sisb Phase-Change Material and Its Applications in Phase-Change Memory

Study of Er-Sb and Er-Te parental alloys used in phase change memory

Characteristics of TeGa$_{2}$Sb$_{14}$ Thin Films for Phase-Change Memory

Te-Free SiSb Phase Change Material for High Data Retention Phase Change Memory Application

Antimony alloys for phase-change memory with high thermal stability

Characteristics of Si-Sb-Te Films for Phase Change Memory

Study of Si-Doped Sb2te3 Films for Phase Change Memory

Materials For Phase-Change Memory With Elevated Temperature Stability

Ab initio molecular dynamics and materials design for embedded phase-change memory

C-Sb Materials As Candidate for Phase-Change Memory

Si–Sb–Te films for phase-change random access memory

Outstanding phase-change behaviors of GaGeSbTe material for phase-change memory application

Low Thermal Conductivity Phase Change Memory Superlattices

The Use of Ga16Sb84 Alloy for Electronic Phase-Change Memory

Thermal Properties And Structure Of Tega2sb7 Thin Films For Phase-Change Memory

Pt Modified Sb2Te3 Alloy Ensuring High−Performance Phase Change Memory