Abstract:One dimensional metal phase change nanomaterials provide a valuable research platform for understanding nanoscale phase transformation behavior and thermal properties, which have potential applications in identification systems such as information storage, barcoding, and detection. Tin(Sn)-based nanowires fabricated using a direct current electrodeposition technique into nanoporous templates are irradiated using electron beam (e-beam) in situ transmission electron microscopy. With the assistance of an oxide shell covering on the Sn-based nanowires, periodic and non-periodic multi-layered nanostructures are precisely sculpted and the reversibility between the original homogeneous alloy phase and the precipitated phases is controllable. The formation mechanism of the phase reversibility and sculpting process also works on other phase change materials, and this was proved using individual SnPb alloy nanowires as a test material. A single Sn-Ag alloy nanowire several microns in length was proved to be easily coded into dozens of morphology/phase statuses, which can be used to produce more than 1000 barcodes. This controllable, phase tunable strategy via selective e-beam irradiation engineering technique is believed to open up a way of sculpting an individual nanowire with various phase statuses and periodicities, which it may be possible to encode into a promising micro-nano identification system with the advantages of ultrahigh capacity, sustainable utilization and good stability.

A Self-Aligned Process for Phase-Change Material Nanowire Confined Within Metal Electrode Nanogap

A Self-Aligned Process to Fabricate a Metal Electrode-Quantum Dot/Nanowire-Metal Electrode Structure with 100％ Yield

Electrothermal Simulation of Single-Walled Carbon Nanotube (Swcnt)-Based Phase Change Memory for 3-Dics

A Nano-Scale-Sized 3d Element for Phase Change Memories

Nanoscale Gap Filling for Phase Change Material by Pulsed Deposition and Inductively Coupled Plasma Etching

Nanoelectromechanical Switches with Vertically Aligned Carbon Nanotubes

Electrothermal Investigation on Vertically Aligned Single-Walled Carbon Nanotube Contacted Phase-Change Memory Array for 3-D ICs

Phase Transition Behaviors of Ga30Sb70/Sb80Te20 Nanocomposite Multilayer Films for Application in Phase Change Random Access Memory

Phase-Change Nanowires for Non Volatile Memory

Fabrication of A Nanoelectromechanical Switch Using A Suspended Carbon Nanotube

Investigation of GeTe/Ge2Sb2Te5 Nanocomposite Multilayer Films for Phase-Change Memory Applications

Simple and low cost fabrication process of high density vertical Phase-Change Random Access Memory integrated with Electroless Deposition method

300 mm integration of a scalable phase change material spacer by inductively coupled plasma etching

Introducing Spontaneously Phase‐Separated Heterogeneous Interfaces Enables Low Power Consumption and High Reliability for Phase Change Memory

Phase transformation of Sn-based nanowires under electron beam irradiation

Size-dependent Characteristics of Highly-Scalable In2Se3 Nanowire Phase-Change Random Access Memory

Phase Change Ge-Rich Ge-Sb-Te/Sb2Te3 Core-Shell Nanowires by Metal Organic Chemical Vapor Deposition

In-Plane Bistable Nanowire For Memory Devices

High Quality Metal-Quantum Dot-Metal Structure Fabricated with a Highly Compatible Self-Aligned Process

Smart Design of Resistive Switching Memory by an In Situ Current‐Induced Oxidization Process on a Single Crystalline Metallic Nanowire

Low Power Phase Change Memory with Vertical Carbon Nanotube Electrode