Abstract:The precise distribution of impurity of the whole silicon ingot is investigated through a theoretical model and the experiments. This model solves the problem of inaccurate prediction of impurity distribution in the final solidification region. The model was used to calculate the distribution of iron impurity in polycrystalline silicon ingots after directional solidification and compared with experiments. The calculation accuracy was significantly improved compared to the traditional Scheil equation. This paper investigates the influence of cooling rate, silicon ingot height and solidification rate on the yield of purified products after directional solidification. For the experimental equipment and raw materials in this paper, the optimal cooling rate of silicon ingots after directional solidification is 0.33 degrees C/s, the optimal height of silicon ingots is 0.34 m, and the yield of silicon purification increases with the decrease of directional solidification rate. Based on the research results, a standard for removing the top skin of silicon ingots after directional solidification and a method for improving the purification yield by suppressing impurity diffusion during the cooling stage were obtained. This model can provide theoretical guidance for the development of low-cost and high -efficiency methods for removing impurities from polycrystalline silicon, and is of great significance for the development of the photovoltaic industry. In addition, the theoretical model proposed in this paper can also be applied to the directional solidification purification process of other materials, such as the preparation of high -purity aluminum and high -purity titanium, and can predict the impurity migration behavior and distribution pattern throughout the purification process.

Resistivity Distribution Characteristics of Metallurgical Silicon Ingot after Directional Solidification

Resistivity Distribution of Multicrystalline Silicon Ingot Grown by Directional Solidification

Electrical Resistivity Distribution of Silicon Ingot Grown by Cold Crucible Continuous Melting and Directional Solidification

Numerical Simulation of Directional Solidification Process for the Polycrystalline Silicon Ingot

Research of Solid-liquid Interface Property During Directional Solidification Process for Multicrystalline Silicon

High Efficiency Solar-Grade Silicon Producing by Directional Solidification Through Controlling Diffusion of Impurity

Continuous Melting and Directional Solidification of Silicon Ingot with an Electromagnetic Cold Crucible

Distributions of substitutional and interstitial impurities in silicon ingot with different grain morphologies

Influence of different vacuum conditions on the distribution of insoluble inclusions in a multi-crystalline silicon ingot

The dislocation distribution characteristics of a multi-crystalline silicon ingot and its impact on the cell efficiency

Improving the Purity of Multicrystalline Silicon by Using Directional Solidification Method

Removal of Metallic Impurities in Metallurgical Grade Silicon by Directional Solidification

Effect of melt flow on impurity distribution in directional solidification of silicon solar cells

Distribution and propagation of dislocation defects in quasi-single crystalline silicon ingots cast by the directional solidification method

Purification Behavior of Impurity Aluminum in Multicrystalline Silicon by Vacuum Induction Melting and Directional Solidification Method

Experimental Study Of 3d Solid-Liquid Interfaces And Their Influence On Directional Solidification Silicon Ingot

Effect of alternating magnetic field on the removal of metal impurities in silicon ingot by directional solidification

Effects of solidification rate on the leaching behavior of metallic impurities in metallurgical grade silicon

Effect of Pulling Rate on Multicrystalline Silicon Ingot During Directional Solidification

A Model for Distribution of Oxygen in Multicrystalline Silicon Ingot Grown by Directional Solidification

Analysis of the formation of interweaved strips in cast quasi-single crystal silicon ingots