Abstract:Precipitation of the impurity phase during the solidification of metallurgical grade silicon melt determines the distribution law and occurrence state of impurities in silicon, while also determining the removal efficiency of impurities during the leaching process. In this research, distribution and occurrence states of inclusions in silicon at different solidification rates were detected via an electron probe microanalyzer (EPMA). Results have shown that the size of the inclusions becomes larger following electric resistance remelting, and some new impurity phases are generated, such as the VSi2 phase, TiSi2 phase, Si-Fe-Al-Ni-Zr phase, and Si25FeAl2Ca16NiCu2 phase. It is seen that there are clear boundaries between different phases. In addition, based on agitation leaching of 4.0 mol·L-1 HCl and 2.0 mol·L-1 HF mixed acid, it was found that most of the impurities in industrial silicon were effectively removed during this process. The impurities in the industrial silicon decreased from 5233.0 ppmw to 181.7 ppmw. The precipitation of the Si-Fe-Al-Ni-Zr (Cu) phase was the main factor providing improved efficiency of impurity removal, which exposed the impurity elements to the greatest extent. Industrial silicon was subjected to resistance remelting at different solidification rates, and the removal effects of impurities were also different. The impurity removal effect was optimal at a solidification rate of 1 oC/min, as the impurities were reduced to 131.9 ppmw.

Influence of different vacuum conditions on the distribution of insoluble inclusions in a multi-crystalline silicon ingot

Non-metallic Particles in Solar Grade Silicon (Sog-Si)

Analysis of the formation of interweaved strips in cast quasi-single crystal silicon ingots

The dislocation distribution characteristics of a multi-crystalline silicon ingot and its impact on the cell efficiency

Effects of solidification rate on the leaching behavior of metallic impurities in metallurgical grade silicon

Electrical Resistivity Distribution of Silicon Ingot Grown by Cold Crucible Continuous Melting and Directional Solidification

The characterization of high quality multicrystalline silicon by the electron beam induced current method

Continuous Melting and Directional Solidification of Silicon Ingot with an Electromagnetic Cold Crucible

Investigation of Impurities Distribution on the mc-Si Ingot Grown by the Silicon Nitride Coated Carbon Crucible: Numerical Simulation

Two-peak Characteristic Distribution of Iron Impurities at the Bottom of Cast Quasi-Single-crystalline Silicon Ingot

Effects of impurities and defects on the distribution of minority carrier lifetime in multi-crystalline silicon

Role of Longitudinal Temperature Gradients in Eliminating Interleaving Inclusions in Casting of Monocrystalline Silicon Ingots

Iron Contamination in Cast Quasi-Single Crystalline Silicon Ingots

Super-gravity field assisted homogeneous distribution of sub-micron eutectic Si in Al-Si alloy

Numerical and Experimental Study of Vacuum Directional Solidification Purification Process for Sog-Si in Metallurgical Route

Removal of Metal Impurities in Metallurgical Grade Silicon by Cold Crucible Continuous Melting and Directional Solidification

Influence of Super-Gravity Coefficient on Spatial Distribution of Solidification Structure in Al-14.5Si Alloys

A Model for Distribution of Oxygen in Multicrystalline Silicon Ingot Grown by Directional Solidification

Slag refining at various viscosity conditions for SiC inclusion removal during Si scraps recycling

Distribution and propagation of dislocation defects in quasi-single crystalline silicon ingots cast by the directional solidification method

Removal of Inclusions from Solar Grade Silicon Using Electromagnetic Field