Experimental Investigation on the Detection Technique for Surface Layer Damage of Machined Silicon Wafers

ZHANG Yin-xia,LI Da-lei,GAO Wei,KANG Ren-ke
DOI: https://doi.org/10.16553/j.cnki.issn1000-985x.2011.02.033
2011-01-01
Abstract:It is difficult to evaluate the damage layer of the machined wafer because it is less.In order to determine the suitable measurement method,the measurement techniques which can be used to evaluate the hard and brittle materials surface layer damage are systemic studied in this paper.The results show that the surface macro/micro pattern can be observed by various microscopes and 3D surface profile meter.The surface defects can be measured by preferential etching and step etching.The subsurface damage depth(SSD) of rough and semi-fine machined wafers can be measured by angle polishing.The SSD of fine machined wafers is less so it should be measured by cross-sectional Raman microspectroscopy or constant corrosion rate method.The microstructure of damage layer,such as microcracks,dislocations,amorphous and polycrystalline phases,can be measured by step etching,TEM analysis and Raman microspectroscopy.The macro residual stress of the surface layer can be measured by Raman microspectroscopy.The micro strain can by evaluated by using HRXRD through the FWHM variation of the X-ray double crystal rocking curves.The machined surface layer damage of silicon wafers can be evaluated systematically by the above measurement techniques.
What problem does this paper attempt to address?