Abstract:High-quality crack-free GaN epitaxial films have been grown on Si substrates by metal organic chemical vapor deposition (MOCVD) using a two-step growth of AlN buffer layer. The AlN buffer layer is first grown at a V/III ratio of 2000 to obtain a 3 dimensional (3D) growth mode, and then the V/III ratio is decreased to 800 to accelerate the coalescence of the AlN grains. In comparison to the single-step AlN buffer layer growth at a fixed V/III ratio of 800, the surface morphology of the AlN buffer layer is preferably coalesced and the crystalline quality is significantly improved via the two-step growth. Furthermore, it is demonstrated that the improvement of the AlN buffer layer driven by the two-step growth method contributes greatly to improving the crystalline quality of the subsequently grown GaN epitaxial films and suppressing the generation of cracks. The excellent quality of the GaN epitaxial films is confirmed by high resolution X-ray diffraction, with full-width at half-maximum values of 338 and 390 arcsec for GaN (0002) and GaN (10-12) rocking curves, respectively. The relationships between the properties of the AlN buffer layers, including the surface morphology and crystalline quality, and the stress condition and crystalline quality of the GaN epitaxial films are elucidated. This work offers an effective approach to achieving high-quality GaN epitaxial films on Si substrates for the application of GaN-based devices.

Optimization of Two-step AlN Buffer of A-Plane GaN Films Grown on R-Plane Sapphire by MOCVD

Sputtering Growth of Preferential C-Axis-oriented Aluminum Nitride Film Using Homogeneous Buffer Layer

Enhancing two-dimensional growth of high-temperature AlN buffer to improve the quality of GaN on Si grown by ex situ two-step method

Effects of Step-graded AlxGa1-xN Buffer on Properties of GaN Films

Comparative Study on MOCVD Growth of a -Plane GaN Films on r -Plane Sapphire Substrates Using GaN, AlGaN, and AlN Buffer Layers

Non-polar A-Plane ZnO Films Grown on R-Al2o3 Substrates Using GaN Buffer Layers

The Effects of Growth Temperature of AlN Buffer Layers Ona-Plane GaN Grown Onr-Plane Sapphire by MOCVD

Effects of the Al Composition in AlGaN Buffer Layer on A-Plane GaN Films Grown on R-Plane Sapphire Substrate by MOCVD

Influence of Double Aln Buffer Layers on the Qualities of Gan Films Prepared by Metal-Organic Chemical Vapour Deposition

Effects of Buffer Layer on Structural Properties of Nonpolar (112¯0)-Plane GaN Film

Effects of Buffer Layer on Structural Properties of Nonpolar (11(2)over-bar0)-Plane GaN Film

Study of Buffer and Epitaxy Technology in Two-Step Growth of Aluminium Nitride

Modulation of Anisotropic Crystalline in A-Plane GaN on HT-AlN Buffer Layer

Effects of the V/III Ratio of a Low-Temperature GaN Buffer Layer on the Structural and Optical Properties of a -Gan Films Grown on R -Plane Sapphire Substrates by MOCVD

Surface Morphology of AlN Buffer Layer and Its Effect on GaN Growth by Metalorganic Chemical Vapor Deposition

High-quality crack-free GaN epitaxial films grown on Si substrates by a two-step growth of AlN buffer layer

Ultrathin GaN film and AlGaN/GaN heterostructure grown on thick AlN buffer by MOCVD

Effect of AlN Buffer Layer Thickness on the Properties of GaN Films Grown by Pulsed Laser Deposition

Surface Morphology of [112̄0]A-Plane GaN Growth by MOCVD on [11̄02]R-Plane Sapphire

Study on a-Plane GaN Thin Films Growth by MOCVD and Its r-Plane Anisotropy

Influence of the Growth Temperature of AlN Buffer on the Quality and Stress of GaN Films Grown on 6h–sic Substrate by MOVPE