Abstract:In this paper, 2–4 in. GaN wafers with high crystal quality were obtained with optimized V/III ratio of source gases on the patterned sapphire substrate (PSS) covered by a sputtered thin AlN buffer layer by using hydride vapor phase epitaxy (HVPE) growth technology. It was found that the morphology and crystal quality of the top GaN layer were significantly different with the variation of V/III ratio of source gases in initial nucleation growth step. Transparent single crystalline GaN layer could be obtained under relatively low V/III ratio of source gases, while it transferred to yellow and polycrystalline structure with increasing of V/III ratio of source gases. This is mainly attributed to the significant transition of GaN nucleation process with different crystallographic plane of AlN buffer layer, and corresponding variation of GaN growth mode at different V/III ratio of source gases, supported by surface, lateral SEM characterization, high-resolution X-ray diffraction (XRD) measurement, and detailed growth mechanism analysis. Moreover, the crystal quality of GaN grown under optimized condition can be further improved by increasing the thickness of GaN. It would offer a simple way to obtain GaN templates with high crystal quality at relatively low cost.

Effects of the V/III Ratio of a Low-Temperature GaN Buffer Layer on the Structural and Optical Properties of a -Gan Films Grown on R -Plane Sapphire Substrates by MOCVD

The Effects of V/III Ratio on Nonpolara-Plane GaN Films Grown Onr-Plane Sapphire by MOCVD

Effects of V/III Ratio on the Growth of a -Plane GaN Films

Effects of V/III ratio on species diffusion anisotropy in the MOCVD growth of non-polar α-plane GaN films

Effects of Buffer Layer on Structural Properties of Nonpolar (112¯0)-Plane GaN Film

Effects of Buffer Layer on Structural Properties of Nonpolar (11(2)over-bar0)-Plane GaN Film

The Influence of V/III Ratio on GaN Grown on Patterned Sapphire Substrate with Low Temperature AlN Buffer Layer by Hydride Vapor Phase Epitaxy

Effects of Ⅴ/Ⅲ ratio on species diffusion anisotropy inthe MOCVD growth of non-polar a-plane GaN films

Effects of Different Ⅴ/Ⅲ Ratios on the Properties of m-Plane GaN Crystal

The Influence of V/III Ratio in the Initial Growth Stage on the Properties of GaN Epilayer Deposited on Low Temperature AlN Buffer Layer

Comparative Study on MOCVD Growth of a -Plane GaN Films on r -Plane Sapphire Substrates Using GaN, AlGaN, and AlN Buffer Layers

The Effects of Growth Temperature of AlN Buffer Layers Ona-Plane GaN Grown Onr-Plane Sapphire by MOCVD

Non-polar A-Plane ZnO Films Grown on R-Al2o3 Substrates Using GaN Buffer Layers

Influences Of Initial Buffer Layer Deposition On Electrical And Optical Properties In Cubic Gan Grown On Gaas(100) By Metalorganic Chemical Vapor Deposition

The Effects of Substrate Nitridation on the Growth of Nonpolar A-Plane GaN on R-Plane Sapphire by Metalorganic Chemical Vapor Deposition

Effect Of Buffer Layer On The Growth Of Gan Films On Sapphire

The Effects of Sapphire Nitridation on GaN Growth by Metalorganic Chemical Vapour Deposition

Effects of the Al Composition in AlGaN Buffer Layer on A-Plane GaN Films Grown on R-Plane Sapphire Substrate by MOCVD

Effect of Buffer Layer Growth Conditions on the Secondary Hexagonal Phase Content in Cubic GaN Films on GaAs(001) Substrates

Microstructural and Optical Properties of GaN Buffer Layers Grown on Graphene

Study on a-Plane GaN Thin Films Growth by MOCVD and Its r-Plane Anisotropy