Abstract:Heteroepitaxial growth of metal-catalyst-free indium nitride (InN) nanorods on GaN/sapphire substrates by radio-frequency metal-organic molecular beam epitaxy (RF-MOMBE) system was investigated. We found that different N/In flow ratios together with the growth temperatures greatly influenced the surface morphology of InN nanorods and their structural properties. The InN nanorods have been characterized in detail using X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM). Optical property was evaluated by photoluminescence (PL) measurements. At lower growth temperatures, InN nanorods were successfully grown. A pronounced two-dimensional growth mode was observed at higher growth temperature of 500 degrees C, and these films showed preferred orientation along the c-axis. XRD patterns and SEM images reveal that InN nanorods has high quality wurtzite structure with FWHM approaching 900 arcsec, and they have uniform diameters of about 150 nm and length of about 800 nm. Meanwhile, no metallic droplet was observed at the end of the nanostructured InN, and this is strong evidence that the nanorods are grown via the self-catalyst process. The PL peak at 0.8 eV is attributed to the quantum confinement and Moss-Burstein effects. These observations provide some valuable insights into the physical-chemical process for manufacturing InN nanorods devices.

Behavioural Investigation of Inn Nanodots by Surface Topographies and Phase Images

Investigation of Ge Quantum Dots Formation on Sio2 Substrate Through Annealing Process

Fabrication of Gan Nanodots Via Gan Thermal Decomposition in H-2 Atmosphere

Characteristics of Annealing of InN Films

Exploration on Electronic Properties of Self-Assembled Indium Nitrogen Nanosheets and Nanowires by a Density Functional Method

Study of surface morphology control and investigation of hexagonal indium nitride nanorods grown on GaN/sapphire substrate

Influence of Thermal Annealing on Properties of InGaN Films

Structural Characterization of Indium-Rich Nanoprecipitate in InGaN V-pits Formed by Annealing

Synthesis and Growth of InN with Pre-deposited Indium Nanodots Method on MOCVD at Low Temperature

Structural Investigations of Epitaxial Inn by X-Ray Photoelectron Diffraction and X-Ray Diffraction

The Temperature Dependence of in Desorption During InN Growth and Annealing

Thermal Annealing of InN Films Grown by Metal–organic Chemical Vapor Deposition

A Density Functional Theory Study of Selfassembled (InN)12n (n=1-9) Nanowires and Nanosheets: Implications for CO2 Capture and Optoelectronic Applications

Investigation of line-shaped CO2 laser annealing on InN/AlN/sapphire substrates

Kinetic growth of self-formed In2O3 nanodots via phase segregation: Ni/InAs system

Study of High Indium InXGa1-XN Alloys with Synchrotron Radiation

High-Precision Determination of Lattice Constants and Structural Characterization of Inn Thin Films

Surface-Induced Carrier Localization and Recombination Characteristics in InGaN/GaN Quantum Dots in Nanopillars

Effects of Growth Temperature on the Optical Properties of InN Nanostructures Grown by MOCVD

The Surface Morphology Evolution of GaN Nucleation Layer during Annealing and Its Influence on the Crystal Quality of GaN Films

Structural and surface analysis of AlInN thin films synthesized by elemental stacks annealing