Abstract:Recently, solid state white lighting, optical data storage and biochemical identification applications have led to a tremendous surge in research aimed at developing high power violet and ultraviolet light emitting diodes(V-LEDs and UV-LEDs). The white LEDs have come to be expected for use in lighting, which consists of a blue LEDs and yellow phosphor or an violet (or UV) LED and red-green-blue phosphors, but conversion efficiency and chromaticity of white LED with violet (or UV) LED were better than that with blue LEDs. Although high-brightness blue LEDs have been realized, high-power violet (or UV) LEDs have not yet been realized due to the high dislocation density. One possible reason for this is considered as the suppression of non-radiative recombination center in In xGa 1-xN active layers. It is known for violet (or UV) LEDs that the addition of a small amount of In to GaN active layer results in the improvement of emission wavelength and efficiency. Recently, the epitaxial lateral overgrowth (ELOG) is effective in reducing the dislocation density, so it can be used to fabricate high-power violet (or UV) LED. Violet-LEDs with InGaN/GaN multi-quantum-wells (MQW) structure were grown by low-pressure metalorganic vapor phase epitaxy (LP-MOVPE). The double crystal X-ray diffraction revealed distinct second order satellite peaks. The emitting peak of PL spectra is at 399.5nm with FWHM of about 15.5nm. InGaN/GaN MQW violet-LEDs have been successfully fabricated with forward voltage about 4V at 20mA injection current.

High Quality GaN-based LED Epitaxial Layers Grown in a Homemade MOCVD System

High Performance Gallium Nitride Based Blue Light Emitting Diode Material Epitaxy and Dry Etching Fabrication Technology

GaN-Based LEDs Grown on Graphene-Covered SiO2/Si (100) Substrate

Quasi-Homoepitaxial Gan-Based Blue Light Emitting Diode on Thick Gan Template

Development of Vertical High-Vacuum MOCVD and Its Applications in GaN Epitaxial Growth and GaN-Based Device Fabrication

Fabrication of High-Brightness Blue Ingan/Gan Mqw Leds

Demonstration of GaN/InGaN Light Emitting Diodes on (100) Β-Ga 2 O 3 Substrates by Metalorganic Chemical Vapour Deposition

InGaN/GaN MQW Violet-LED Grown by LP-MOCVD

Growth of III-Nitride Materials and Blue Light-Emitting Diodes by Metal Organic Vapor Phase Epitaxy

Fabrication of blue and green non-polar InGaN/GaN multiple quantum well light-emitting diodes on LiAlO2(100) substrates

Graphene/p-AlGaN/p-GaN Electron Tunnelling Light Emitting Diodes with High External Quantum Efficiency

InGaN/GaN multiple quantum well blue LEDs on 3C-SiC/Si substrate

Stripping GaN/InGaN epitaxial films and fabricating vertical GaN-based light-emitting diodes

High‐Brightness Blue Light‐Emitting Diodes Enabled by a Directly Grown Graphene Buffer Layer

Ingan/Gan Blue Light Emitting Diodes Grown on Si(110) and Si(111) Substrates

Homo-epitaxial Growth of High Crystal Quality GaN Thin Films by Plasma Assisted–molecular Beam Epitaxy

Fabrication and Characterization of GaN-Based Micro-LEDs on Silicon Substrate*

Ingan/Gan Multilayer Quantum Dots Yellow-Green Light-Emitting Diode with Optimized Gan Barriers

GaN-based Blue LEDs with Microstructure on P-Gan Surface Formed by Inductively Coupled Plasma Etching

Quasi van der Waals Epitaxy of Single Crystalline GaN on Amorphous SiO2/Si(100) for Monolithic Optoelectronic Integration

Structural and Optical Properties of Nonpolar m-Plane GaN and GaN-Based LEDs on γ-LiAlO <sub>2</sub>