Abstract:In this paper, InGaN/GaN multiple quantum-well blue light emitting diodes (LEDs) are successfully grown on Si(110) and Si(111) substrates. The micro-structural properties of the LEDs are characterized by means of high-resolution X-ray diffraction, atomic force microscopy, Raman spectra, and temperature dependent photoluminescence measurements. The results show that the sample on Si(110) substrate exhibits the high crystal quality, weak tensile strain, and large internal quantum efficiency. The optoelectronic properties of the LED devices are also investigated. The I-V curves indicate that the LED devices fabricated on Si(110) and Si(111) substrates have similar series resistances and low reverse leakage currents, but the LED devices fabricated on Si(110) substrate possess lower turn-on voltages. The relationship between light output intensity and injection current suggests that the LED device fabricated on Si(110) substrate has a strong light output efficiency. The study on the variation of spectral peak energy with injection current of the LED device reveals that LED device on Si(110) substrate presents a smaller spectral shift range when increasing the injection current. And the smaller spectral shift range reflects the weak quantum-confined Stark effect in the device, which can be attributed to the high crystal quality and weak strain between well layer and barrier film in the LED sample grown on Si(110).

InGaN/GaN multiple quantum well blue LEDs on 3C-SiC/Si substrate

Ingan/Gan Blue Light Emitting Diodes Grown on Si(110) and Si(111) Substrates

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Growth of III-Nitride Materials and Blue Light-Emitting Diodes by Metal Organic Vapor Phase Epitaxy

Fabrication of blue and green non-polar InGaN/GaN multiple quantum well light-emitting diodes on LiAlO2(100) substrates

Fabrication of High-Brightness Blue Ingan/Gan Mqw Leds

Multicolored-light Emission from InGaN/GaN Multiple Quantum Wells Grown by Selective-Area Epitaxy on Patterned Si(100) Substrates

InGaN/GaN multi-quantum-well nanowires and light emitting

Monolithic semi-polar () InGaN/GaN near white light-emitting diodes on micro-striped Si (100) substrate*

Performance enhancement of InGaN/GaN MQWs grown on SiC substrate with sputtered AlN nucleation layer

Monolithic semi-polar ($1ar{1}01$) InGaN/GaN near white light-emitting diodes on micro-striped Si (100) substrate

GaN LEDs on Si Substrate

V-shaped Semipolar InGaN/GaN Multi-Quantum-well Light-Emitting Diodes Directly Grown on C-Plane Patterned Sapphire Substrates

Realization of Highly Efficient InGaN Green LEDs with Sandwich-like Multiple Quantum Well Structure: Role of Enhanced Interwell Carrier Transport

Demonstration of GaN/InGaN Light Emitting Diodes on (100) Β-Ga 2 O 3 Substrates by Metalorganic Chemical Vapour Deposition

Progress in Nitride-based LEDs on Silicon Substrates

High-efficiency Vertical-Structure GaN-based Light-Emitting Diodes on Si Substrates

High-efficiency Near-Uv Light-Emitting Diodes on Si Substrates with InGaN/GaN/AlGaN/GaN Multiple Quantum Wells

Semipolar ( 11̅01 ) InGaN/GaN red–amber–yellow light-emitting diodes on triangular-striped Si (100) substrate

Improving Modulation Bandwidth of C-Plane GaN-based Light-Emitting Diodes by an Ultra-Thin Quantum Wells Design.

InGaN/AlGaN DH Green LED\+*