Abstract:Taper-free and vertically oriented Ge nanowires were grown on Si (111) substrates by chemical vapor deposition with Au nanoparticle catalysts. To achieve vertical nanowire growth on the highly lattice mismatched Si substrate, a thin Ge buffer layer was first deposited, and to achieve taper-free nanowire growth, a two-temperature process was employed. The two-temperature process consisted of a brief initial base growth step at high temperature followed by prolonged growth at lower temperature. Taper-free and defect-free Ge nanowires grew successfully even at 270 degrees C, which is 90 degrees C lower than the bulk eutectic temperature. The yield of vertical and taper-free nanowires is over 90%, comparable to that of vertical but tapered nanowires grown by the conventional one-temperature process. This method is of practical importance and can be reliably used to develop novel nanowire-based devices on relatively cheap Si substrates. Additionally, we observed that the activation energy of Ge nanowire growth by the two-temperature process is dependent on Au nanoparticle size. The low activation energy (similar to 5 kcal/mol) for 30 and SO nm diameter Au nanoparticles suggests that the decomposition of gaseous species on the catalytic Au surface is a rate-limiting step. A higher activation energy (similar to 14 kcal/mol) was determined for 100 nm diameter Au nanoparticles which suggests that larger Au nanoparticles are partially solidified and that growth kinetics become the rate-limiting step.

GeO x and SiO x nanowires grown via the active oxidation of Ge and Si substrates

SYNTHESIS OF AMORPHOUS SiOx NANOSTRUCTURES

Growth of heterojunctions in Si-Ge alloy nanowires by altering AuGeSi eutectic composition using an approach based on thermal oxidation

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Growth of silica nanowire arrays by reaction of Si substrate with oxygen using Ga as catalyst

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Oxidation Resistant Germanium Nanowires: Bulk Synthesis, Long Chain Alkanethiol Functionalization and Langmuir-Blodgett Assembly

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Taper-free and vertically oriented Ge nanowires on Ge/Si substrates grown by a two-temperature process

Preparation and Raman Spectroscopy of GeO2 Nanowires

Untangling the role of oxide in Ga-assisted growth of GaAs nanowires on Si substrates

Studies on the Synthesis and Growth Mechanism of Single Crystal ZnO Nanowires

Growth and Photoluminescence of Si-SiOx Nanowires by Catalyst-Free Chemical Vapor Deposition Technique

The Influence of Surface Oxide on the Growth of Metal/Semiconductor Nanowires

The synthesis of metal oxide nanowires by directly heating metal samples in appropriate oxygen atmospheres