One-dimensional Growth Induced by Thermal Stress

XN Zhang,CR Li,Z Zhang
DOI: https://doi.org/10.1016/j.matlet.2003.11.027
IF: 3
2004-01-01
Materials Letters
Abstract:Amorphous SiOx nanowires grown on the surface of big Ag particles were synthesized by evaporation of a mixture of SiO and Ag2O. The morphologies at different growth stages hint at a special kind of growth mechanism different from the classical vapor–liquid–solid (V–L–S) mechanism and oxygen assistant mechanism. A layer of SiOx wraps the Ag particles in the cooling process. The SiOx nanowire growth is induced by the thermal stress accumulated in the interface of the outer SiOx layer and Ag particles for different shrinking coefficients. When the thermal stress accumulates to a certain degree, the SiOx layer chaps and peels off from the Ag particles to form SiOx nanowires.
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