Growth of silica nanowire arrays by reaction of Si substrate with oxygen using Ga as catalyst

Lun Dai,L.P. You,X.F. Duan,W.C. Lian,G.G. Qin
DOI: https://doi.org/10.1016/j.physleta.2004.12.029
IF: 2.707
2005-01-01
Physics Letters A
Abstract:Silica nanowire arrays were grown by oxidizing Si substrates with Ga catalyst in temperatures of 520–900 °C. The Si substrates, painted with a layer of molten Ga, were placed on a quartz boat, and heated up in a tube furnace. At high temperatures, Ga atoms condense into spheres, along with a small amount of silicon atoms. Si–O–Ga then formed on the surface of Ga–Si alloy sphere, and silica nanowire arrays were eventually grown with typical diameters of about 15–20 nm. A growth model based on extended vapor–liquid–solid mechanism is suggested.
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