Controllable Ga/Ga 2 O 3 Nanowire Growth at High Temperatures Enabled by Au and Pd Quantum Dot Catalysts
Hang Wang,Jiawei Yang,Anqi Wang,Ying Wang,Ning Han,Jun Yang,Yunfa Chen
DOI: https://doi.org/10.1021/acs.cgd.2c00752
IF: 4.01
2022-09-15
Crystal Growth & Design
Abstract:Though Ga has increasing roles such as electrocatalytic reduction of CO2 and its one-dimensional structure can provide an effective electron pathway, it is challenging to synthesize Ga nanowires (NWs) due to its low melting point (29.7 °C). In this study, single-crystalline Ga/Ga2O3 NWs are synthesized by chemical vapor deposition at 650 °C by using Au and Pd quantum dots (QDs) as catalysts and GaSb as the Ga source. The results show that the growth of Ga/Ga2O3 NWs is dependent on the size of the QDs, where smaller Au (2.7–3.8 nm) and Pd (1.9–3.6 nm) favor Ga/Ga2O3 NW growth, while larger Au (7.1 nm) and Pd (8.9 nm) lead to more GaSb NW growth. Further, the <110>- and <100>-oriented NWs are preferentially grown by the Au and Pd catalysts. The Ga/Ga2O3 NWs have a thin surface oxide layer, which is verified by X-ray photoelectron spectroscopy, which also accounts for the Schottky contact of the Ga/Ga2O3 NWs with Ni electrodes. The Ga/Ga2O3 NWs persist the single-crystalline phase to at least 400 °C by in situ transmittance electron microscopy observation, and the NW shape breaks until 950 °C by annealing in air.
chemistry, multidisciplinary,materials science,crystallography