Influence of outmost layer on laser induced damage threshold of 1064 nm high-reflection mirrors

Jiangtao Lü,Hongfei Jiao,Xinbin Cheng,Bin Ma,Tao Ding,Jinlong Zhang,Zhengxiang Shen,Gang Zhou
DOI: https://doi.org/10.3788/HPLPB20112304.0977
2011-01-01
Abstract:Electron beam evaporation method was applied to deposit three sets of 1064 nm laser mirrors with different outmost layers: quarter-wavelength HfO2, half-wavelength SiO2 and quarter-wavelength SiO2 layers, respectively. High reflectivity (more than 99.8%) has been achieved for all the stacks, and irradiated at normal incidence photothermal measurements of absorption are 3.0×10-6, 5.0×10-6 and 6.5×10-6, respectively. Corresponding laser induced damage thresholds(LIDTs) are 32.5 J/cm2, 45.2 J/cm2 and 28.4 J/cm2. The relations of electric field distribution, absorption, layer material characters and LIDT are also discussed.
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