Influence of outmost layer on laser induced damage threshold of 1064nm high-reflection mirrors

Lu Jiangtao,Jiao Hongfei,Cheng Xinbin,Ma Bin,Ding Tao,Zhang Jinlong,Shen Zhengxiang,Zhou Gang
DOI: https://doi.org/10.3788/HPLPB20112304.0977
2011-01-01
High Power Laser and Particle Beams
Abstract:Electron beam evaporation method was applied to deposit three sets of 1 064 nm laser mirrors with different outmost layers: quarter-wavelength HfO2,half-wavelength SiO2 and quarter-wavelength SiO2 layers,respectively.High reflectivity(more than 99.8%) has been achieved for all the stacks,and irradiated at normal incidence photothermal measurements of absorption are 3.0×10-6,5.0×10-6 and 6.5×10-6,respectively.Corresponding laser induced damage thresholds(LIDTs) are 32.5 J/cm2,45.2 J/cm2 and 28.4 J/cm2.The relations of electric field distribution,absorption,layer material characters and LIDT are also discussed.
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