Improved Model of Residual Stress on Top Electrode Membrane of Fixed-Fixed Beam RF MEMS Switches

CHEN Jun-shou,YOU Zheng,LI Bin
DOI: https://doi.org/10.3969/j.issn.1672-6030.2011.01.004
2011-01-01
Abstract:Residual stress on the top electrode membrane of fixed-fixed beam radio frequency(RF) micro electro mechanical system(MEMS) switches has impact on the performance of the parameters,such as the response time and the pull-down voltage,and reduces the reliability of RF MEMS switches.On the basis of analysis of the traditional stretched wire model,an improved residual stress model that can be used for compressive stress and in asymmetric situation was proposed in this paper.A group of typical parameters of MEMS switches was selected to simulate and calculate the influence of biaxial residual stress on the deflection of fixed-fixed MEMS membrane.Results show that the maximum deflection reduced by 7.95% under 1 MPa tensile stress,and increased by 9.47% under-1 MPa compressive stress.Compared with the traditional model,the proposed model has eliminated the error resulting from nonlinear superposition by about 0.3%.An experimental verification was taken by using two groups of experimental data to calculate the pull-down voltage.The theoretical results of the model were approximately consistent with the experimental data.
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