Abstract:InAs nanowires (NWs) have been considered to be highly suitable for future nanoscale photonic applications in mid-wave infrared region. However, progress in this area has been seriously hampered because of the poor radiative efficiency of InAs NWs attributed to their non-radiative (NR) surface. Herein, we demonstrated that a significant improvement of optical performances of InAs NWs grown by chemical vapor deposition could be achieved via sulfur passivation process. Luminescence properties of InAs NWs via organic sulfide (ODT) and inorganic sulfide ((NH4)2S) passivation were investigated by detailed photoluminescence (PL) measurement, which exhibited ∼17-fold enhancement in the intensity of optical emission compared to unpassivated InAs NWs. Moreover, the results of this investigation revealed that compared to ODT passivation, (NH4)2S passivation provided a more effective method to enhance the luminescence intensity even up to room temperature. This improvement of optical emission arises from the efficient passivation of surface defect states which act as competing NR centers. Furthermore, the stability of the passivated InAs NWs was investigated by PL measurement as a function of storage time in air. These findings are important for the successful implementation of optoelectronic devices based on InAs NWs.

Improved photoluminescence from passivated InP surface by (NH4)2S treatment

Enhanced Luminescence Properties of InAs Nanowires Via Organic and Inorganic Sulfide Passivation

The Surface Passivation on the Optical and Surface Properties of InP

The surface and photoluminescence properties of GaAs passivated by wet chemical method

The influence of sulfide passivation on optical properties of InAs nanowires

The Influence of Al2O3 Films on the Optical Stability of S-passivated InP

Sulfur Passivation of GaAsSb Alloy Layer Surfaces: Comparison of Ammonium Sulfide and Disulfur Dichloride Solutions

The Enhanced Optical Property of Chemical Passivated N Type GaSb

Correlation of the Electronic and Atomic Structure at Passivated n-InP(100) Surfaces

Effect of Al2O3 on the optical stability of InP induced by atom layer deposition

Photoluminescence Analysis of the Ternary Alloy GaAsSb Sulfur Passivation

Tailing the Optical Property of GaAsSb by Passivating with S2Cl2 Solution

Tailoring the Photoluminescence Characteristics of P-Type GaSb: the Role of Surface Chemical Passivation

Study on Surface Passivation Homogeneity of Gallium Antimonide Using Photoluminescences

Enhancement and Stability of Photoluminescence from Si Nanocrystals Embedded in A Sio2 Matrix by H-2-Passivation

Luminescence Enhancement of Plasma-Etched InAsP∕InGaAsP Quantum Wells

Study On Neutral Sulphur Passivation Of Gallium Antimonide Surface

Enhancement of Photoluminescence from Organic and Inorganic Surface Passivated ZnS Quantum Dots

Improvement of photoluminescence efficiency and photoelectricity performances of InP quantum dots through the passivation of surface defects

The Surface and Optical Properties of Passivated Gasb with Different Passivating Agents

The effect of (NH4)2Sx passivation on the (311)A GaAs surface and its use in AlGaAs/GaAs heterostructure devices