The influence of sulfide passivation on optical properties of InAs nanowires

Li Bao-Bao,Li Sheng-Juan,Chen Gang,Li Shi-Min,Wang Xing-Jun
DOI: https://doi.org/10.11972/j.issn.1001-9014.2019.05.008
2019-01-01
JOURNAL OF INFRARED AND MILLIMETER WAVES
Abstract:To solve the problem of low luminescence efficiency caused by the surface oxidation of InAs nanowires, C18H38S and(NH4)(2)S were adopted to passivate zinc blende(ZB)InAs nanowires synthesized by chemical vapor deposition(CVD). Photoluminescence(PL)spectra of(before and after sulfide passivation)InAs nanowires were performed. The experimental results show that the PL emission efficiency of C18H38S and(NH4)(2) S passivated InAs nanowires are similar to 6 times and similar to 7 times higher than that of unpassivated InAs nanowires at 25 K, respectively. In addition,the PL of(NH4)(2)S passivation InAs nanowires is detected at room temperature,which provides a possibility for future InAs nanowires based middle infrared nanophoton devices.
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