Abstract:GaSb is one of the most suitable semiconductors for optoelectronic devices operating in the mid-infrared range. However, the existence of GaSb surface states has dramatically limited the performance of these devices. Herein, a controllable nitrogen passivation approach is proposed for GaSb. The surface states and optical properties of GaSb were found to depend on the N passivation conditions. Varying the plasma power during passivation modified the chemical bonds of the GaSb surface, which influenced the emission efficiency. X-ray photoelectron spectroscopy was used to quantitatively demonstrate that the GaSb oxide layer was removed via treatment at a plasma power of 100 W. After nitrogen passivation, the samples exhibited enhanced emission. Free exciton emission was the main factor leading to this enhanced luminescence. An energy band model for the surface states is used to explain the carrier radiative recombination processes. This nitrogen passivation approach can suppress surface states and improve the surface quality of GaSb-based materials and devices. The enhancement in exciton-related emission by this simple approach is important for improving the performance of GaSb-based optoelectronic devices.

The Enhanced Optical Property of Chemical Passivated N Type GaSb

Tailoring the Photoluminescence Characteristics of P-Type GaSb: the Role of Surface Chemical Passivation

Dramatic enhancement in the gain of a GaAs/AlGaAs heterostructure bipolar transistor by surface chemical passivation

The Surface and Optical Properties of Passivated Gasb with Different Passivating Agents

Surface State Passivation and Optical Properties Investigation of GaSb Via Nitrogen Plasma Treatment

Study on Surface Passivation Homogeneity of Gallium Antimonide Using Photoluminescences

Tailing the Optical Property of GaAsSb by Passivating with S2Cl2 Solution

Effect of Nitrogen Passivation on Optical Properties of Te-doped GaSb

The surface and photoluminescence properties of GaAs passivated by wet chemical method

The Improvement of Gallium Antimonide Surface by Sulphur Passivation

Study on the properties of gallium antimonide surface passivatied with S2Cl2 solution

Enhanced Band Edge Luminescence in GaAs with Sulfur Passivation

The Optical Characterization Of Gasb Treatment By Sodium Sulfide Solution

Optical properties of gallium arsenide passivated by ZnS

Study On Neutral Sulphur Passivation Of Gallium Antimonide Surface

Effect of Surface Sulfur Passivation on Photoresponse Characteristics of GaAs Materials

Improved photoluminescence from passivated InP surface by (NH4)2S treatment

The Optical Property Improvement of GaAs Via Surface Passivation and Carriers Restriction of MgO Film

Photoluminescence Properties of the Gasb Nanostructures Irradiated by Femtosecond Laser

Optical Properties Improvement of GaSb Epilayers Through Defects Compensation Via Doping

Improvement of Surface Passivation Homogeneity of Gallium Antimonide by Bromination