Abstract:GaSb is one of the most suitable semiconductors for optoelectronic devices operating in the mid-infrared range. However, the existence of GaSb surface states has dramatically limited the performance of these devices. Herein, a controllable nitrogen passivation approach is proposed for GaSb. The surface states and optical properties of GaSb were found to depend on the N passivation conditions. Varying the plasma power during passivation modified the chemical bonds of the GaSb surface, which influenced the emission efficiency. X-ray photoelectron spectroscopy was used to quantitatively demonstrate that the GaSb oxide layer was removed via treatment at a plasma power of 100 W. After nitrogen passivation, the samples exhibited enhanced emission. Free exciton emission was the main factor leading to this enhanced luminescence. An energy band model for the surface states is used to explain the carrier radiative recombination processes. This nitrogen passivation approach can suppress surface states and improve the surface quality of GaSb-based materials and devices. The enhancement in exciton-related emission by this simple approach is important for improving the performance of GaSb-based optoelectronic devices.

Improvement of Surface Passivation Homogeneity of Gallium Antimonide by Bromination

The Improvement of Gallium Antimonide Surface by Sulphur Passivation

Study on Surface Passivation Homogeneity of Gallium Antimonide Using Photoluminescences

Dramatic enhancement in the gain of a GaAs/AlGaAs heterostructure bipolar transistor by surface chemical passivation

Study on the properties of gallium antimonide surface passivatied with S2Cl2 solution

Study On Neutral Sulphur Passivation Of Gallium Antimonide Surface

Tailing the Optical Property of GaAsSb by Passivating with S2Cl2 Solution

Surface State Passivation and Optical Properties Investigation of GaSb Via Nitrogen Plasma Treatment

Tailoring the Photoluminescence Characteristics of P-Type GaSb: the Role of Surface Chemical Passivation

The surface and photoluminescence properties of GaAs passivated by wet chemical method

Sulfur Passivation of GaAsSb Alloy Layer Surfaces: Comparison of Ammonium Sulfide and Disulfur Dichloride Solutions

A Sulfur Passivation for Gaas Surface by an Organic Molecular, Ch3csnh2 Treatment

Improved Interfacial and Electrical Properties of GaSb Metal Oxide Semiconductor Devices Passivated with Acidic (NH4)2S Solution

A Mild Electrochemical Sulfur Passivation Method for Gaas(100) Surfaces

Photoluminescence Analysis of the Ternary Alloy GaAsSb Sulfur Passivation

Newly Developed Passivation of GaAs Surfaces and Devices

Sulfurized Passivation of GaAs(100) Surfaces

The Progress of Sr Study on the Passivation of Semiconductor Surface in Nsrl

Progress In Sulfur Passivation Of Gaas Surfaces

The Surface and Optical Properties of Passivated Gasb with Different Passivating Agents

Improved Interfacial and Electrical Properties of Gasb Metal Oxide Semiconductor Devices Passivated with Acidic (nh4)(2)s Solution