Abstract:Currently, aluminum oxide stacked with silicon nitride (Al2O3/SiNx:H) is a promising rear passivation material for high-efficiency P-type passivated emitter and rear cell (PERC). It has been indicated that atomic layer deposition system (ALD) is much more suitable to prepare high-quality Al2O3 films than plasma-enhanced chemical vapor deposition system and other process techniques. In this study, an ultrafast, non-vacuum spatial ALD with the deposition rate of around 10 nm/min, developed by our group, is hired to deposit Al2O3 films. Upon post-annealing for the Al2O3 films, the unwanted delamination, regarded as blisters, was found by an optical microscope. This may lead to a worse contact within the Si/Al2O3 interface, deteriorating the passivation quality. Thin stoichiometric silicon dioxide films prepared on the Si surface prior to Al2O3 fabrication effectively reduce a considerable amount of blisters. The residual blisters can be further out-gassed when the Al2O3 films are thinned to 8 nm and annealed above 650°C. Eventually, the entire PERC with the improved triple-layer SiO2/Al2O3/SiNx:H stacked passivation film has an obvious gain in open-circuit voltage (V oc) and short-circuit current (J sc) because of the increased minority carrier lifetime and internal rear-side reflectance, respectively. The electrical performance of the optimized PERC with the V oc of 0.647 V, J sc of 38.2 mA/cm(2), fill factor of 0.776, and the efficiency of 19.18% can be achieved.

The Influence of Al2O3 Films on the Optical Stability of S-passivated InP

P-type Tin–indium Oxide Films Prepared by Thermal Oxidation of Metallic InSn Alloy Films

Effect of surface treatments on interfacial characteristics and band alignments of atomic-layer-deposited Al2O3 films on GaAs substrates

Comparative Study of Si3N4-PECVD and Al2O3-ALD Surface Passivation in T-Shaped Gate InAlAs/InGaAs InP Based HEMTs

Effect of Sc2O3 Passivation Layer on the Electrical Characteristics and Stability of InSnZnO Thin-Film Transistors

Effect of post-deposition annealing on electrical properties and structures of aluminum oxide passivation film on a crystalline silicon substrate

Effect of Sc 2 O 3 Passivation Layer on the Electrical Characteristics and Stability of InSnZnO Thin-Film Transistors

In Situ Passivation of Inp Surface Using H2s During Metal Organic Vapor Phase Epitaxy

Improved Surface Characteristics and Contact Performance of Epitaxial P-Algan by a Chemical Treatment Process

Dual Function of Antireflectance and Surface Passivation of Atomic-Layer-Deposited $\hbox{al}_{2}\hbox{o}_{3}$ Films

Investigation on the passivated Si/Al2O3 interface fabricated by non-vacuum spatial atomic layer deposition system

Ultrathin ZnS and ZnO Interfacial Passivation Layers for Atomic-Layer-Deposited HfO2 Films on InP Substrates

Aluminum Oxide Deposited by Pulsed-DC Reactive Sputtering for Crystalline Silicon Surface Passivation

Al 2 O 3 / NbAlO / Al 2 O 3 Sandwich Gate Dielectric Film on InP

Efficiency enhancement of perovskite solar cells based on Al2O3-passivated nano-nickel oxide film

Correlation of the Electronic and Atomic Structure at Passivated n-InP(100) Surfaces

Light-soaking Enhanced Passivation of Al2O3 on Crystalline Silicon Surface

Dual functions of anti-reflectance and surface passivation of the atomic layer deposited Al2O3 films on crystalline silicon substrates

Influence of Oxygen Passivation on Optical Properties of Pbse Thin Films

Enhanced Si Passivation and PERC Solar Cell Efficiency by Atomic Layer Deposited Aluminum Oxide with Two-step Post Annealing

Highly effective passivation of crystalline silicon surfaces achieved through transparent conductive Al-doped ZnO layers