Abstract:The increasing prevalence of integrated on-chip optoelectronic devices has identified serious issues regarding inter-device transmission and coupling losses, highlighting an urgent need for on-chip waveguide amplifiers to compensate for these losses. Compared with other Er-based optical materials, erbium silicate is ideally suited to high-efficiency on-chip amplifiers and lasers because of its extremely high Er 3+ concentration (10 22 cm −3 ). Nevertheless, erbium silicate must be annealed above 1000°C to crystallize and activate the Er 3+ , which damages other on-chip optoelectronic components and is not conducive to device integration. Here, we report a low-fabrication-temperature, high-luminescence-efficiency gain material by adding Bi 2 O 3 to an erbium-ytterbium silicate mixed film. Our experiments demonstrate that the proposed film crystallizes at 600° C while the activation of Er 3+ is also achieved, which is the lowest activation temperature of on-chip waveguide amplifier to our knowledge. This material forms the basis for a new chip-scale waveguide amplifier design, with a theoretical multi-energy-level model of Bi-Er-Yb in the mixed thin films used to analyze its signal enhancement properties. We achieve a peak on-chip gain of 23 dB in a 3.3-mm-long waveguide under the pump and signal powers of 300 mW and 1 µW, respectively. These results highlight the potential of the proposed material for realizing on-chip amplifiers and lasers for large-scale nanophotonic integrated circuits.

Photoluminescence Enhancement And High Gain Amplification Of Erxy2-Xsio5 Waveguide

Extraordinary Infrared Photoluminescence Efficiency of Er0.1Yb1.9SiO5 Films on SiO2/Si Substrates

Numerical Analysis of Amplification Characteristics of ErxY2 − Xsio5

Optical Amplification in Er/Yb Silicate Strip Loaded Waveguide

Optical amplification in Er/Yb silicate slot waveguide.

E r silicate nanowire light source for silicon photonics

Rare earth silicates as gain media for silicon photonics [Invited]

Erbium-doped Ga2O3 waveguide for optical amplification

Photoluminescence and electroluminescence of erbium yttrium and ytterbium co-doped Er silicates

High-gain Erbium Silicate Waveguide Amplifier and a Low-Threshold, High-Efficiency Laser.

Low Threshold Erxyb(Y)(2-X)Sio5 Nanowire Waveguide Amplifier

Enhanced Luminescence of Erbium Doped Ga2O3 Films and Devices by Optimizing Annealing Process

Hybrid ${\rm Si}_{3}{\rm N}_{4}\hbox{-}{\rm Er}/{\rm Yb}$ Silicate Waveguides for Amplifier Application

Correlation Of Efficient Luminescence With Crystal Structures Of Y-Er2si2o7 And Alpha-Er2si2o7 In Er-Doped Silicon Oxide Films

Correlation of Efficient Luminescence with Crystal Structures of Y-Er2si2o7 and Α-Er2si2o7 in Er-doped Silicon Oxide Films

A low-fabrication-temperature, high-gain chip-scale waveguide amplifier

Research Progress of Er Silicate Compound Light Source Materials and Devices for Silicon Photonics Application

Spontaneous Emission Rate and Optical Amplification of Er 3+ in Double Slot Waveguide

Near-infrared Luminescence of Erbium Doped Ga2O3 Films and Devices Based on Silicon: Realization of Energy Transfer

Optical Gain from Luminescent A-Sinxoy Waveguide

Strong Enhancement of Er(3+) 1.54 Μm Electroluminescence Through Amorphous Si Nanoparticles.