Abstract:Although traditional quantum-confined nanostructures e.g. regular quantum wells or quantum dots have achieved huge success in the field of semiconductor lasers for past decades, these traditional nanostructures are encountering the difficulty of enhancing device performance to a higher level due to their inherent gain bottleneck. In this paper, we are proposing a new super-gain nanostructure based on self-assembled well-wire complex energy-band engineering with InGaAs-based materials to break through the existing bottleneck. The nanostructure is constructed by utilizing the special strain-driven indium (In)-segregation and the growth orientation-dependent on-GaAs multi-atomic step effects to achieve the distinguished ultra-wide and uniform super-gain spectra. The structural details and its luminescence mechanism are investigated by multiple measurement means and theoretical modeling. The polarized gain spectra with the max fluctuation of <3 cm −1 in 904 nm–998 nm for transverse electric (TE) mode and 904 nm–977 nm for transverse magnetic (TM) mode are simultaneously obtained with this nanostructure. It enables an ultra-low output power fluctuation of <0.7 dB and a nearly-constant threshold power throughout an ultra-wide wavelength range under a fixed injection level. It was difficult to realize these in the past. Therefore, the described super-gain nanostructure brings a brand-new chance of developing high performance of tunable laser diodes.

Optical Gain from Luminescent A-Sinxoy Waveguide

The Role of N-Si-O Defect States in Optical Gain from an A-Sinxoy/sio2 Waveguide and in Light Emission from an N-a-sinxoy/p-si Heterojunction LED

Photoluminescence Enhancement And High Gain Amplification Of Erxy2-Xsio5 Waveguide

Near-infrared Luminescent Polymer Waveguide with a 20db Small-Signal Gain

Surface plasmon-enhanced amorphous-silicon-nitride light emission with single-layer gold waveguides

Localized Surface Plasmon Resonance Enhanced Photoluminescence from SiNx with Different N/Si Ratios

Luminescent polymer waveguide amplifiers operating in the near-infrared

Development of Gain-clamped 850 nm Superluminescent Diode

Optical Amplification in Er/Yb Silicate Strip Loaded Waveguide

Erbium-doped LNOI As a Gain Platform for Integrated Optics

1550-Nm Light Amplification from Erbium-Doped Silica Glass Waveguide Written by Femtosecond Laser Pulses

Numerical Analysis of Amplification Characteristics of ErxY2 − Xsio5

Observation of waveguide Fabry-Perot lasing in highly efficient Si nanocrystals

Photoluminescence of nc-Si/SiN superlattices embedded in optical microcavities

A New Luminescent Defect State in Low Temperature Grown Amorphous SiNxOy Thin Films

Emission Characteristics of All-Silicon Distributed Feedback Lasers with a Wide Gain Range

White Light Emission and Optical Gains from a Si Nanocrystal Thin Film.

High-gain Erbium Silicate Waveguide Amplifier and a Low-Threshold, High-Efficiency Laser.

Near infrared light amplification in Gold diffused Silicon-on-Insulator waveguides

Super-gain nanostructure with self-assembled well-wire complex energy-band engineering for high performance of tunable laser diodes

Boosting light emission from Si-based thin film over Si and SiO(2) nanowires architecture.