Abstract:Nowadays, the use of plasmonic metal layers to improve the photonic emission characteristics of several semiconductor quantum dots is a booming tool. In this work, we report the use of silicon quantum dots (SiQDs) embedded in a silicon nitride thin film coupled with an ultra-thin gold film (AuNPs) to fabricate light emitting devices. We used the remote plasma enhanced chemical vapor deposition technique (RPECVD) in order to grow two types of silicon nitride thin films. One with an almost stoichiometric composition, acting as non-radiative spacer; the other one, with a silicon excess in its chemical composition, which causes the formation of silicon quantum dots imbibed in the silicon nitride thin film. The ultra-thin gold film was deposited by the direct current (DC)-sputtering technique, and an aluminum doped zinc oxide thin film (AZO) which was deposited by means of ultrasonic spray pyrolysis, plays the role of the ohmic metal-like electrode. We found that there is a maximum electroluminescence (EL) enhancement when the appropriate AuNPs-spacer-SiQDs configuration is used. This EL is achieved at a moderate turn-on voltage of 11 V, and the EL enhancement is around four times bigger than the photoluminescence (PL) enhancement of the same AuNPs-spacer-SiQDs configuration. From our experimental results, we surmise that EL enhancement may indeed be due to a plasmonic coupling. This kind of silicon-based LEDs has the potential for technology transfer.

Surface plasmon-enhanced amorphous-silicon-nitride light emission with single-layer gold waveguides

Surface Plasmon Enhanced Photoluminescence from Porous Silicon Nanowires Decorated with Gold Nanoparticles

Localized Surface Plasmon Resonance Enhanced Photoluminescence from SiNx with Different N/Si Ratios

Simultaneous Excitation and Emission Enhancement of Fluorescence Assisted by Double Plasmon Modes of Gold Nanorods

Electroluminescence Enhancement from Silicon Nanocrystals Using Doublelayer Surface-Plasmon Waveguide

Enhanced Photoluminescence of Silicon Quantum Dots in the Presence of Both Energy Transfer Enhancement and Emission Enhancement Mechanisms Assisted by the Double Plasmon Modes of Gold Nanorods

Spontaneous emission rate enhancement of nano-structured silicon by surface plasmon polariton

Plasmon-Enhanced Emission from Cmos Compatible Si-Leds with Gold Nanoparticles

Surface-Plasmon-Enhanced photoluminescence from Nano-Porous Silicon Layer

Plasmonic-enhanced photoluminescence in porous silicon with pore-embedded gold nanoparticles fabricated by direct reduction of chloroauric acid

Internal Quantum Efficiency Enhancement of Silicon Nanocrystals Using Doublelayer Au Film Surface-Plasmon Waveguide

Enhancing the Photoluminescence Intensity of Silicon-Rich Nitride Film by Localized Surface Plasmon Enhanced Photo-Excitation

Dye Gain Gold NW Array of Surface Plasmon Polariton Waveguide

Effect of Scattering from Localized Surface Plasmon Resonance on Improving the Luminescence Efficiency of Silicon Nitride Light-Emitting Devices

Surface-plasmon-enhanced GaN-LED based on the multilayered rectangular nano-grating

Improved Electroluminescence from Silicon Nitride Light Emitting Devices by Localized Surface Plasmons

Photoluminescence enhancement of Silicon-rich silicon nitride film induced by silver localized surface plasmon

Enhanced Electroluminescence from Silicon Quantum Dots Embedded in Silicon Nitride Thin Films Coupled with Gold Nanoparticles in Light Emitting Devices

Surface Plasmon Enhanced Blue–green Photoluminescence from Carbon-Rich Amorphous Silicon Carbide Films

Localized-surface-plasmon enhanced emission from porous silicon by gold nanoparticles.