Abstract:A systematic theoretical study of the electronic and optical properties of Ga$_{1-x}$In$_x$As self-assembled quantum-wires (QWR's) made of short-period superlattices (SPS) with strain-induced lateral ordering is presented. The theory is based on the effective bond-orbital model (EBOM) combined with a valence-force field (VFF) model. Valence-band anisotropy, band mixing, and effects due to local strain distribution at the atomistic level are all taken into account. Several structure models with varying degrees of alloy mixing for lateral modulation are considered. A valence force field model is used to find the equilibrium atomic positions in the QWR structure by minimizing the lattice energy. The strain tensor at each atomic (In or Ga) site is then obtained and included in the calculation of electronic states and optical properties. It is found that different local arrangement of atoms leads to very different strain distribution, which in turn alters the optical properties. In particular, we found that in model structures with thick capping layer the electron and hole are confined in the Ga-rich region and the optical anisotropy can be reversed due to the variation of lateral alloying mixing, while for model structures with thin capping layer the electron and hole are confined in the In-rich region, and the optical anisotropy is much less sensitive to the lateral alloy mixing.

Intrinsic Optical Anisotropy Of [001]-Grown Short-Period Inas/Gasb Superlattices

Electric fields and valence band offsets at strained [111] heterojunctions

Interface Layers in In0.532ga0.468as/Inp Superlattices

In-Plane Optical Anisotropy In Asymmetric Si1-Xgex/Si/Si1-Ygey Superlattices

Observation of Interface Dependent Spin Polarized Photocurrents in Inas/Gasb Superlattice

X-Ray Diffraction Analysis of High Quality Inas/Gasb Type Ii Superlattices Grown by Mbe

In-plane Anisotropic Photoluminescence of C-plane GaN under Asymmetric Biaxial Strain

Interface Design And Properties In Inas/Gasb Type-Ii Superlattices Grown By Molecular Beam Epitaxy

Optical Polarization Characteristics of C-Plane InGaN/GaN Asymmetric Nanostructures

Optical anisotropy and strain-induced birefringence in dislocation-free silicon single crystals

Photo-excited Carrier Density in Short-Period InAs/GaSb Type-Ii Superlattice

Material and device characterization of Type-II InAS/GaSb superlattice infrared detectors

In-Plane Optical Anisotropy of A-Plane Gan Film on R-Plane Sapphire Grown by Metal Organic Chemical Vapour Deposition

Polarized Photoluminescence and Absorption in A-Plane Inn Films

Modeling and Simulation of Inas/Gasb Type-Ii Superlattices with Different Interface Layers

Study on In-Plane Optical Anisotropy of Si0.75Ge0.25∕Si∕Si0.5Ge0.5 Asymmetric Superlattice by Reflectance Difference Spectroscopy

Structural and Optical In-Plane Anisotropy of M-Plane GaN

Strong Terahertz Absorption in Long-Period InAs / GaSb Type-Ii Superlattices with Inverted Band Structures

Systematic study of Ga$_{1-x}$In$_x$As self-assembled quantum wires with different interfacial strain relaxation

Studies on Inas/Gasb Superlattice Structural Properties by High Resolution X-Ray Diffraction

Optical Anisotropic Properties of M-Plane GaN Film Grown by Metalorganic Chemical Vapor Deposition