Abstract:The lattice quality of strain superlattice structures in Quantum Cascade Lasers (QCLs) directly influences the photoelectric properties and service life of the lasers. However, the evaluation method for lattice quality on the nanoscale is not very well developed at present, especially for interface lattice quality assessment. In this investigation, all atoms positioned in the multiple interface layers can be simultaneously and accurately determined through Subset Geometric Phase Analysis (S-GPA) combined with a Peak Finding (PF) method and an Optimal Approximation Algorithm (OAA) with a sensitivity of about 0.04 Å. Based on the determined interface location, the strain distribution in all layers of the superlattice structure was simultaneously measured using the improved S-GPA by means of the optimal selection of multiple reference areas. A quantitative evaluation of the strain/stress compensation effect was then carried out based on the theoretical model of elastic mechanics. The proposed method was successfully applied to evaluating the lattice quality of an In0.6Ga0.4As/In0.44Al0.56As superlattice structure grown by Molecular Beam Epitaxy (MBE). The obtained results show that the interface lattices are almost perfect with a uniform thickness of layers, without any defects and stress concentration. Each In0.44Al0.56As layer and adjacent In0.6Ga0.4As layers provided effective strain/stress compensation for each other, reducing the possibility of forming dislocations. In one period, the active region has been properly strain-balanced to give a nearly net zero strain. The proposed method can not only be applied in evaluating the growth quality of the superlattice structure with a large field of view, but also provide quantitative experimental data for further improving the superlattice design.

Modeling and Simulation of Inas/Gasb Type-Ii Superlattices with Different Interface Layers

Interface Layers in In0.532ga0.468as/Inp Superlattices

Band structure calculation of InAs/GaSb superlattice under 4 layers model

Simulation of the band structure of InAs/GaSb type II superlattices utilizing multiple energy band theories

The Interface Structure of InAs/GaInSb Strained-Layer Superlattice

Interface Design And Properties In Inas/Gasb Type-Ii Superlattices Grown By Molecular Beam Epitaxy

Studies on Inas/Gasb Superlattice Structural Properties by High Resolution X-Ray Diffraction

First-Principles Study of Interface Relaxation Effect on Interface and Electronic Structures of Inas/Gasb Superlattices with Different Interface Types

Atomic imaging and optical properties of InAs/In0.5Ga0.5As0.5Sb0.5 type II superlattice

Understanding the role of interface in advanced semiconductor nanostructure and its interplay with wave function overlap

Fabrication and Characterization of an InAs(Sb)/InxGa1−xAsySb1−y Type‐II Superlattice

The Effect of Sb Content in InAs1-xSbx/GaSb Type-II Superlattices

Long-Period InAs/GaSb Type-II Superlattices for Terahertz Application

The Influence Of Graded Inxga1-Xas On Strain Distribution And The Band Gap In The Inas/Gaas Quantum Dots

Observation of Interface Dependent Spin Polarized Photocurrents in Inas/Gasb Superlattice

X-Ray Diffraction Analysis of High Quality Inas/Gasb Type Ii Superlattices Grown by Mbe

Intrinsic Optical Anisotropy Of [001]-Grown Short-Period Inas/Gasb Superlattices

Interface layer control and optimization of InAs/GaSb type-II superlattices grown by molecular beam epitaxy

Electronic and optical properties of InAs/InAs$_{0.625}$Sb$_{0.375}$ superlattices and their application to far-infrared detectors

Interfacial Structure of InAs/Ga1−xInxSb Superlattices

Quantitative Evaluation of the Interface Lattice Quality of a Strain Superlattice by Strain Analysis.