Abstract:Abstract Gallium nitride (GaN) thin films have attracted considerable attention for manufacturing optical and electronic devices. They have wide bandgap and superb performance in these applications. The reliability and durability of optoelectronic devices depend on the quality of the GaN thin films. The metal-organic chemical vapor deposition (MOCVD) process is a common manufacturing technique for fabricating high-quality thin films. By manipulating the operating conditions and the reactor design, one can control the deposition rate and the uniformity of the thin film. In this paper, the manufacturing process for GaN thin films in a multi-wafer MOCVD reactor is simulated based on the three-dimensional computational model of an experimental system which provides data for validation as well as realistic design parameters. The reactor pressure and the flow rate of the precursor, trimethyl-gallium (TMG), significantly affect the deposition rate and film uniformity. The incursion of impurities in the deposition can be reduced by increasing the volumetric ratio of NH3 to TMG (V/III) and reducing the reactor pressure. The deposition rate and quality of the thin film are enhanced using an appropriate mixture of H2 and N2 as the carrier gas. The design of the inlet can also be varied to improve the utilization of metal-organic precursors and increase the deposition rate. This paper presents and discusses results on these aspects for this important manufacturing process. Thus, it leads to a better understanding of the basic mechanisms involved and provides guidelines for obtaining high deposition rates with high film quality in practical chemical vapor deposition reactors.

Simulation and Analysis of Flow Field in Nitride MOCVD Reactor Chamber

Numerical Simulation of Gas Phase and Surface Reaction for Growth of GaN by MOCVD

MOCVD Process Numerical Simulation of GaN and Geometrical Optimization of the Showerhead Reactor

CFD Simulation of Flow Patterns in GaN-MOCVD Reactor

Effect of reactor geometry on GaN in a vertical MOCVD reactor

Effect of Growth Parameters on GaN in a Vertical MOCVD Reactor

Numerical Simulation of Flow Patterns in the GaN-MOCVD Reactor

Operational Optimization of GaN Thin Film Growth Employing Numerical Simulation in a Showerhead MOCVD Reactor

CFD NUMERICAL SIMULATION AND OPTIMIZATION OF GAN-MOCVD REACTOR

Simulation of growing GaN in vertical HVPE reactor

P‐7.3: Numerical Modeling of GaN Growth by MOCVD on Metal Substrate

Simulation-Assisted Design of Metal Organic Chemical Vapor Deposition Reactor

Influence of Species Transport and Inlet Condition on the MOCVD-Grown GaN Uniformity

Finite Element Analysis of the Temperature Field in A Vertical Mocvd Reactor by Induction Heating

Growth Rate and Surface Morphology as A Function of Growth Parameter for GaN MOCVD

Species Transport and Chemical Reaction in a MOCVD Reactor and Their Influence on the GaN Growth Uniformity

Numerical Simulation of Flow and Temperature Field in MOCVD Reactor

Manufacturing of Gallium Nitride Thin Films in a Multi-Wafer MOCVD Reactor

An inductively coupled plasma metal organic chemical vapor deposition based on showerhead structure for low temperature growth

Study on the optimization of the deposition rate of planetary GaN-MOCVD films based on CFD simulation and the corresponding surface model

Simulation of the Mocvd Reactor for Zno Growth