Abstract:Abstract Gallium nitride (GaN) thin films have attracted considerable attention for manufacturing optical and electronic devices. They have wide bandgap and superb performance in these applications. The reliability and durability of optoelectronic devices depend on the quality of the GaN thin films. The metal-organic chemical vapor deposition (MOCVD) process is a common manufacturing technique for fabricating high-quality thin films. By manipulating the operating conditions and the reactor design, one can control the deposition rate and the uniformity of the thin film. In this paper, the manufacturing process for GaN thin films in a multi-wafer MOCVD reactor is simulated based on the three-dimensional computational model of an experimental system which provides data for validation as well as realistic design parameters. The reactor pressure and the flow rate of the precursor, trimethyl-gallium (TMG), significantly affect the deposition rate and film uniformity. The incursion of impurities in the deposition can be reduced by increasing the volumetric ratio of NH3 to TMG (V/III) and reducing the reactor pressure. The deposition rate and quality of the thin film are enhanced using an appropriate mixture of H2 and N2 as the carrier gas. The design of the inlet can also be varied to improve the utilization of metal-organic precursors and increase the deposition rate. This paper presents and discusses results on these aspects for this important manufacturing process. Thus, it leads to a better understanding of the basic mechanisms involved and provides guidelines for obtaining high deposition rates with high film quality in practical chemical vapor deposition reactors.

Effect of reactor geometry on GaN in a vertical MOCVD reactor

Simulation of growing GaN in vertical HVPE reactor

Numerical Simulation of Gas Phase and Surface Reaction for Growth of GaN by MOCVD

MOCVD Process Numerical Simulation of GaN and Geometrical Optimization of the Showerhead Reactor

Growth Rate and Surface Morphology as A Function of Growth Parameter for GaN MOCVD

Operational Optimization of GaN Thin Film Growth Employing Numerical Simulation in a Showerhead MOCVD Reactor

P‐7.3: Numerical Modeling of GaN Growth by MOCVD on Metal Substrate

Numerical Study And Optimization Of Gan Thin-Film Growth By Mocvd Method

Study on the optimization of the deposition rate of planetary GaN-MOCVD films based on CFD simulation and the corresponding surface model

Simulation of a New Style Vertical HVPE System

CFD Simulation of Flow Patterns in GaN-MOCVD Reactor

Effects of Thermal Convection on Growth Rate of GaN by MOVPE

Influence of Porous Media and Substrate Rotation on AlN Growth in MNVPE Reactors Based on CFD Simulations

Numerical Simulation Study on Chemical Reaction-transport Process of AlN MOCVD Growth

Simulation of the ZnO-MOCVD Horizontal Reactor Geometry

CFD NUMERICAL SIMULATION AND OPTIMIZATION OF GAN-MOCVD REACTOR

Effect of Growth Conditions and Reactor Configuration on the Growth Uniformity of Large-Scale Graphene by Chemical Vapor Deposition

Manufacturing of Gallium Nitride Thin Films in a Multi-Wafer MOCVD Reactor

Numerical study on jet effect in the vertical showerhead MOCVD reactor

Numerical simulation study on growth rate and gas reaction path of InN-MOCVD with Close-Coupled showerhead reactor

Effect of initial condition on the quality of GaN film and AlGaN/GaN heterojunction grown on flat sapphire substrate with ex-situ sputtered AlN by MOCVD