Abstract:It is challenging to grow aluminum nitride (AlN) in c-axis orientation on a metal electrode, primarily due to lattice mismatch and the difference between the coefficients of thermal expansion. In this work, we investigate and optimize the effects of several process parameters such as plasma power, N2 flow concentration, quality of the bottom electrode, and oxygen content. The optimized deposition parameters are necessary for the growth of highly c-axis textured AlN thin film having a thickness of 300 nm on a Mo/SiO2/Si substrate. To this end, c-axis oriented AlN thin films were sputtered on a molybdenum (Mo) electrode at the low substrate temperature (300°C). The quality of the Mo electrode was optimized in terms of the surface roughness, interfacial energy, and full width at half maximum (FWHM) of x-ray diffraction (XRD) peak for facilitating the c-axis growth of the AIN film. Results indicate that the growth of AlN film in (002) orientation on the Mo electrode strongly depends on plasma power, the optimum value of which is found to be 300 W. Also, an extremely low FWHM of AlN (002) peak 0.62° is achieved at ∼ 38% N2 concentration. The oxygen content is also found to be an influential parameter, with a threshold value of 28% by atomic weight, beyond which amorphous growth of the AIN film is observed. The fabricated Mo-AlN-Mo structure has a dielectric constant of 8.89 and a capacitance value of 42 pF measured across the top electrode area of 400 × 400 μm2. The grown c-axis oriented AlN film can be used in applications such as the piezoelectric energy harvester (PEH) and the thin-film bulk acoustic resonator (FBAR).

Influence of Porous Media and Substrate Rotation on AlN Growth in MNVPE Reactors Based on CFD Simulations

Effect of flux rate on the growth of AlN films on sapphire by MNVPE

High-quality AlN growth: a detailed study on ammonia flow

Numerical Simulation Study on Chemical Reaction-transport Process of AlN MOCVD Growth

Rate-limiting process and growth kinetics of AlN thin films by microwave plasma CVD with AlBr3-NH3-N2 system

Optimization of the process parameters for the AlN crystal growth in the PVT method through an improved numerical simulation considering partial pressure of gas phases

Modeling of Multi-Species Transfer During Aluminum Nitride Vapor Growth

Optimization of growth parameters of AlN thin films and investigation of electrical and electroluminescence characteristics from Au/i-AlN/n-GaN UV light-emitting diode

Three-step Growth of AlN Films on Sapphire Substrates by Metal Nitride Vapor Phase Epitaxy

Atomic Simulation of Homoepitaxial AlN on Non-Polar (11-20) Plane

AlN Thin Films Grown on Different Substrates by Metal Nitride Vapor Phase Epitaxy

Influence of Substrate Temperature on Structural Properties and Deposition Rate of AlN Thin Film Deposited by Reactive Magnetron Sputtering

MBE Growth of AlN Nanowires on Si Substrates by Aluminizing Nucleation

Effect of Al Substrate Nitridation on the Properties of AlN Films Grown by Pulsed Laser Deposition and Its Mechanism

Growth of Spontaneous Nucleation AlN Crystals by Al-Base Alloy Evaporation in Nitrogen Atmosphere

Influence of Temperature Field Distribution on the Growth of Aluminum Nitride Crystal by Simulation Technology

High-Quality AlN Grown by a Combination of Substrate Pretreatment and Periodic Growth Mode Control

Growth-microstructure-thermal property relations in AlN thin films

Influence of Process Parameters and Formation of Highly c-Axis Oriented AlN Thin Films on Mo by Reactive Sputtering

The growth mechanism of 〈1010〉 oriented AlN thin films by low-frequency plasma-enhanced metalorganic chemical vapour deposition process

Helical Growth of Aluminum Nitride: New Insights into Its Growth Habit from Nanostructures to Single Crystals