Abstract:Al-doped ZnO (AZO) films were prepared on glass substrates by RF magnetron sputtering in an Ar?+?5%H2 ambient at room temperature. The influence of film thickness (851101?nm) on the structural, electrical, and optical properties of the films was investigated. With increasing film thickness, it is found that the crystallinity of the films is improved and the surface roughness of the films increases. The decrease of resistivity is accompanied by an increase of carrier concentration and mobility. At the film thickness of 5831101?nm, larger figures of merit (FOM) of the films can be obtained, in which the film with a thickness of 803?nm has the lowest resistivity of 3.13 x 10(-4)?O?cm, a sheet resistance of 3.90?O/sq, and an average optical transmittance in the visible range of 80%. With increasing film thickness, the crystallite size, carrier concentration, and mobility of the films increase simultaneously, implying that the main scattering mechanism is the intercrystallite boundary scattering. It is found that the optical bandgap (Eg) increases from 3.50 to 3.72?eV with film thickness, and this increase can be ascribed to the BursteinMoss (BM) effect after considering all possible effect factors. The results demonstrate that AZO films deposited in an Ar?+?H2 atmosphere at room temperature are suitable for application in thin-film solar cells as transparent conductive electrode layers.

Effects of O_2/Ar Ratio at Rated Pressure on Conductivity of Thin ZnO:Al Films

Influence of O_2/Ar Flow Ratio on Microstructures and Photoluminescence of ZnO Films

Effects of deposition power and pressure on the crystallinity of Al-doped ZnO thin films at glass substrates by low temperature RF magnetron sputtering

Effect of Ar Pressure on the Structure and Properties of ZnO∶Al Films Deposited by RF Magnetron Sputtering

Studies on ZnO:Al thin films deposited by in-line reactive mid-frequency magnetron sputtering

Influence of O2/Ar Ratio on the Structural, Electrical, and Optical Properties of Transparent Conductive Zirconium-Doped ZnO Films Prepared by Radiofrequency Sputtering

Effect of Argon Pressure on Properties of Flexible ZnO∶Al Films

Influence of Argon Gas Pressure on the Zno:Al Films Deposited on Flexible Tpt Substrates at Room Temperature by Magnetron Sputtering

Thickness Study of AZO Films by RF Sputtering in Ar + H2 Atmosphere at Room Temperature

Investigation of ZnO∶Al Thin Films Deposited by RF Magnetron Sputtering

Oxygen influence on sputtered high rate ZnO:Al films from dual rotatable ceramic targets

Effects of substrate temperature and oxygen partial pressure on ZAO Film by DC magnetron sputtering

Optimization of Sputtering Parameters for Deposition of Al-doped ZnO Films by Rf Magnetron Sputtering in Ar+H2 Ambient at Room Temperature

Effects of thickness on the properties of AZO films

The Influences of High Energetic Oxygen Negative Ions and Active Oxygen on the Microstructure and Electrical Properties of ZnO:Al Films by MF Magnetron Sputtering

Effect of technologic parameters on the performances of ZAO thin films deposited by magnetron sputtering

Highly Transparent Conductive ZnO Films Prepared by Reactive RF Sputtering with Zn/ZnO Composite Target

Effects of oxygen ambient on the structural, morphological, optical and electrical properties of AZO/Ag/AZO transparent electrodes

EFFECTS OF H2 FLUX ON THE STRUCTURE AND PROPERTIES OF ZnO∶Al THIN FILMS DEPOSITED BY DC MAGNETRON SPUTTERING AT LOW TEMPERATURE

Highly Conductive AZO Thin Films Obtained by Rationally Optimizing Substrate Temperature and Oxygen Partial Pressure

Effects of Growth Temperature and Annealing Atmosphere on Structure and Properties of ZnO:Al Thin Films