Abstract:Aluminum nitride (AlN) thin films with c-axis preferred orientation have been prepared by reactive direct-current (DC) magnetron sputtering. The degree of preferred crystal orientation, the cross-sectional structure, and the surface morphology of AlN thin films grown on Si (100) substrates at various substrate temperatures from 60°C to 520°C have been investigated by x-ray diffraction, scanning electron microscopy, and atomic force microscopy. Results show that the substrate temperature has a significant effect on the structural properties, such as the degree of c-axis preferred orientation, the full-width at half-maximum (FWHM) of the rocking curve, the surface morphology, and the cross-sectional structure as well as the deposition rate of the AlN thin films. The optimal substrate temperature is 430°C, with corresponding root-mean-square surface roughness (R rms) of 1.97 nm, FWHM of AlN (002) diffraction of 2.259°, and deposition rate of 20.86 nm/min. The mechanisms behind these phenomena are discussed. Finally, film bulk acoustic resonators based on AlN films were fabricated; the corresponding typical electromechanical coupling coefficient (k t 2 ) is 5.1% with series and parallel frequencies of 2.37 GHz and 2.42 GHz, respectively.

Magnetron Sputter Epitaxy and Characterization of Wurtzite AlInN on Si(111) Substrates

Structural and optical properties of wurtzite InN grown on Si(111)

Structural and Electrical Properties of AlxIn1-xN (0.10≤x≤0.94) Films Grown on Sapphire Substrates

Epitaxial AlN film with improved quality on Si (111) substrates realized by boron pretreatment via MOCVD

Growth of AIN Films by RF Reactive Magnetron Sputtering for Film-Bulk-Acoustic-Wave-Resonator Fabrication

Hetero-Epitaxial Growth of AlN Deposited by DC Magnetron Sputtering on Si(111) Using a AlN Buffer Layer

Low temperature growth of c-axis oriented AlN films on γ-LiAlO2 by radio frequency magnetron sputtering

Molecular Beam Epitaxy and Characterization of Wurtzite ScxAl1−xN

AlN Thin Films Deposited on Different Si-based Substrates Through RF Magnetron Sputtering

Influence of Substrate Temperature on Structural Properties and Deposition Rate of AlN Thin Film Deposited by Reactive Magnetron Sputtering

Heteroepitaxy of N-polar AlN on C-face 4H-SiC: Structural and optical properties

Epitaxial Growth of High Quality AlN Films on Metallic Aluminum Substrates

Study of Tungsten Deposited on Amorphous Si, Si (111) and Sio2 Using Direct-Current Magnetron Sputtering

Epitaxial Growth of High Quality AlN Films on Si Substrates

EPITAXIAL GROWTH OF AlN AND NbN FILMS ON (111) MgO SUBSTRATE

Morphological Properties of AlN Piezoelectric Thin Films Deposited by DC Reactive Magnetron Sputtering

Ultra-violet Light Assisted Reactive RF Magnetron Sputtering Deposition of AlN Thin Films at Room Temperature

Optimization of growth parameters of AlN thin films and investigation of electrical and electroluminescence characteristics from Au/i-AlN/n-GaN UV light-emitting diode

The optical properties and applications of AlN thin films prepared by a helicon sputtering system

Epitaxial Growth and Interfaces of High-Quality InN Films Grown on Nitrided Sapphire Substrates

High-Precision Determination of Lattice Constants and Structural Characterization of Inn Thin Films