Effect Of Pulse Repetition Frequency On The Semiconductor Devices Burnout Caused By Microwave Pulses

Xi Chen,Zhengwei Du
2010-01-01
Abstract:Microwave pulses, one of the electromagnetic interferences, may cause permanent damage to semiconductor devices. Microwave pulses can be either single shot or repetitive. Pulse repetition frequency (PRF) is one of the most important parameters of repetitive pulses. Every semiconductor component burnout caused by microwave pulses has a threshold of PRF. Increasing the PRF can reduce the burnout peak power only when the PRF is above the threshold. To calculate the threshold, a theoretical model is proposed in this paper. The model is relatively general and can be applied to both transistors and p-i-n limiter diodes in common radio frequency front ends. Based on the model, an approximate formula is further proposed for quick estimation. The verification has shown that both the model and the approximate formula are competent to estimate the value of the threshold. Copyright (C) 2010 Praise Worthy Prize S.r.l. - All rights reserved.
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