Abstract:In this study, the effects of different influence factors on electroplating-based via-filling process were studied in a systematic manner. A through-silicon-via (TSV) chip was firstly designed, the chip size was $16\times 10{\rm mm}^{2}$ with the TSV interconnects. The via was in diameter of $50\mu {\rm m}$ and depth of $75\mu {\rm m}$. The deep reactive ion etching (DRIE) technique was employed to fabricate the vias onto the silicon wafer. In order to fill up the vias by using the electroplating process, the ${\rm SiO}_{2}$ isolation layer was firstly prepared onto the sidewall and the defined surface of the wafer using the plasma enhanced chemical vapor deposition (PECVD) technique, the TiW barrier layer was prepared onto the ${\rm SiO}_{2}$ layer with the sputtering process, the Cu seed layer was then deposited onto the barrier layer by the sputtering process to provide a foundation for copper growth during electroplated deposition. To achieve the “bottom-up” via-filling, the addictives were added into the copper plating solution. The results showed that the void free Cu filling can be achieved with an optimal additives ratio. The variation in both via opening and depth were found to be key factors influencing the via-filling quality. The process parameters such as current density, power waveform and so on were found to affect the vial filling quality. A comparison on the effects of key process parameters was made, showing that the current density, voltage waveform, and pulse reserve are three key parameters that affect the filling quality more than other parameters.

Simulation of electric field uniformity in through silicon via filling

Influence of Electroplating Current Density on Through Silicon Via Filling

Study on the behaviors of Cu filling in special through-silicon-vias by the simulation of electric field distribution

Modeling the Bottom-Up Filling of Through Silicon Vias with Different Additives

Modeling the Copper Electrodeposition of Through-silicon-vias Corresponded to Linear Sweep Voltammetry

A Numerical Model for Bottom-Up Copper Electrodeposition of TSV with Additives

Effect of leveler on microstructure and stress of electroplated copper for TSV application

Numerical Model with Competitively Adsorptive Mechanism for Copper Electrodeposition of TSV

Simulation of TSV Copper Electrodeposition Process with Additives

Potential-Dependence Of Additives Distribution In Copper Electrodeposition Via Filling

Wetting Process of Copper Filling in Through Silicon Vias

Electrochemical Analysis of Cathode in TSV Copper Electroplating

Simulation of through via bottom-up copper plating with accelerator for the filling of TSVs

FEA study on the TSV copper filling influenced by the additives and electroplating process

Simulation of copper electroplating fill process of through silicon via

Simulation and Optimization on the Uniformity of the Electroplating film

Parametric study of electroplating-based via-filling process for TSV applications

Numerical simulation of copper electrodeposition for Through Silicon Via (TSV) with SPS-PEG-Cl additive system

Effect of additives on copper electroplating profile for TSV filling

Numerical Modeling And Experimental Verification Of Through Silicon Via (Tsv) Filling In Presence Of Additives

Numerical Simulation of Optimizing Plating Uniformity of Interconnect Circuits on Printed Circuit Boards