Improved barrier properties of Ru/TaSiN stack on NiSi/Si for copper contact technology

Xinping Qu,Ying Zhao,Qi Xie,Xiaomeng Zhang,Christophe Detavernier

2010-01-01

Abstract:null

What problem does this paper attempt to address?

Improved diffusion barrier properties and NiSi thermal stability for the Cu contact with the Ru/TaSiN stack on NiSi/Si

Xinping Qu,Xiaomeng Zhang,Ying Zhao,ShaoRen Deng,Christophe Detavernier

DOI: https://doi.org/10.1149/2.004301ssl

2013-01-01

ECS Solid State Letters

Abstract:The thermal stability and electrical properties of Cu contact on NiSi/Si with diffusion barrier of Ru/TaN and Ru/TaSiN stacks were compared. The Cu/Ru/TaSiN system has better barrier performance and NiSi thermal stability than the Cu/Ru/TaN system does on the NiSi/Si substrate. It is found that Cu diffusing into NiSi/Si would cause formation of not only Cu3Si but also NiSi2. The thermal expansion of Cu is less on the Ru/TaSiN/NiSi system than on the other systems. The results show that good interface adhesion and thermal expansion between NiSi and the barrier are very important in the Cu on NiSi contact technology. (C) 2012 The Electrochemical Society. [DOI: 10.1149/2.004301ssl] All rights reserved.
Ru/TaSiN with different Ta/Si atomic ratio as barrier for Cu contact on NiSi substrate

Xiaomeng Zhang,Ying Zhao,Fei Chen,Xinping Qu

DOI: https://doi.org/10.1109/ICSICT.2010.5667526

2010-01-01

Abstract:The thermal stability and electrical properties of Cu contact on the NiSi substrate with a Ru/TaSiN barrier stack were investigated. The Ta/Si atomic ratio of the TaSiN is varied to optimize the barrier property. The results show that by introducing certain amount of Si into the TaN film, the Ru/TaSiN structure can be both thermally and electrically stable up to 500°C annealing for 30 minutes. The Ru/TaSiN stack will have potential application as diffusion barrier for Cu contact on NiSi.
Cu Contact on NiSi/Si with a Ru/TaN Barrier Stack

Ying Zhao,Mi Zhou,Ji Li,Guo-Ping Ru,Yu-Long Jiang,Bing-Zong Li,Xin-Ping Qu

DOI: https://doi.org/10.1109/icsict.2008.4734769

2008-01-01

Abstract:The thermal and electrical stabilities of Cu contact on NiSi substrate with and without a Ru/TaN barrier stack were investigated. Four point probe (FPP), X-ray diffraction (XRD), scanning electron microscopy (SEM), and Schottky barrier height (SBH) measurement were carried out to characterize the diffusion barrier properties. The results show that the Ru(14 nm)/TaN(15 nm) stack can be both thermally and electrically stable up to 500°C annealing for 30 minutes and it will have potential application as a diffusion barrier for Cu contact on NiSi.
Cu contact on NiSi substrate with a Ta/TaN barrier stack

Mi Zhou,Ying Zhao,Wei Huang,Bao-Min Wang,Guo-Ping Ru,Yu-Long Jiang,Ran Liu,Xin-Ping Qu

DOI: https://doi.org/10.1016/j.mee.2008.04.047

IF: 2.3

2008-01-01

Microelectronic Engineering

Abstract:The thermal and electrical stabilities of Cu contact on NiSi substrate with and without a Ta/TaN barrier stack in between were investigated. Four-point probe (FPP), X-ray diffraction (XRD), scanning electron microscopy (SEM), depth-profiling X-ray photoelectron spectroscopy (XPS), and Schottky barrier height (SBH) measurement were carried out to characterize the diffusion barrier properties. The SBH measurement provides a very sensitive method to characterize the diffusion barrier properties for the copper contact on NiSi/Si. The results show that the Ta/TaN stack can be both thermally and electrically stable after annealing at 450^oC for 30min and it will have a potential application as a diffusion barrier for Cu contact on NiSi.
Cu Contact on NiSi/Si with Thin Ru/TaN Barrier

Ying Zhao,Mingfei Zhou,Guo-Ping Ru,Yu-Long Jiang,Xin-Ping Qu

DOI: https://doi.org/10.1016/j.mee.2010.06.035

IF: 2.3

2011-01-01

Microelectronic Engineering

Abstract:Thin Ru(5 nm)/TaN(15 nm) bi-layer was sputtered on the NiSi/Si substrate as a diffusion barrier in the copper contact structure. The barrier properties were investigated through X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), transmission electron microscopy (TEM), energy dispersive X-ray (EDX) and electrical measurement. The whole Cu/Ru/TaN/NiSi/Si structure has a good thermal stability until after annealing at 450 °C. The Schottky barrier measurement shows that the leakage current increases after 450 °C annealing and after 500 °C annealing the barrier fails. Failure mechanism of the barrier stack is discussed.
Comparison of Ru/Ta and Ru/TaN as Barrier Stack for Copper Metallization

Xin-Ping Qu,Jing-Jing Tan,Mi Zhou,Tao Chen,Guo-Ping Ru,Bing-Zong Li

DOI: https://doi.org/10.1557/proc-0914-f09-02

2006-01-01

Abstract:The diffusion barrier properties for ultrathin Ru/Ta and Ru/TaN bilayer structure as the copper diffusion barrier are compared. Cu, Ru, Ta and TaN thin films are deposited by using the ion beam sputtering technique. The experimental results show that the thermal stability of the Cu/Ru/Ta or TaN /Si structure is much more improved than that of the Cu/Ru/Si structure without the interlayer. However, the Cu/Ru/TaN/Si shows better thermal stability than the Cu/Ru/Ta/Si structure, which should be attributed to the amorphous nature of the TaN interlayer. The microstructure evolution of the Cu/Ru/Ta (TaN)/Si structure during annealing is discussed. The results show that the Ru/TaN bilayer can be a very promising diffusion barrier in the future seedless Cu interconnect technology.
Tan/Ta As an Effective Diffusion Barrier for Direct Contact of Copper and Nisi

Yu-Long Jiang,Qi Xie,Xin-Ping Qu,David W. Zhang,Davy Deduytsche,Christophe Detavernier

DOI: https://doi.org/10.1149/2.020201esl

2012-01-01

Abstract:In this letter, the bi-layered structure of TaN/Ta is revealed to be an effective diffusion barrier for copper (Cu)/NiSi direct contact application. Comparing with the conventional Cu/Ta/TaN/NiSi contact structure, the proposed Cu/TaN/Ta/NiSi contact structure can significantly increase the contact failure temperature over 100 degrees C. It is demonstrated that the NiSi morphological stability is effectively enhanced by Ta capping, which is crucial to improve the performance of Cu/TaN/Ta/NiSi contact. For TaN/Ta diffusion barrier, the Cu diffusion through TaN/Ta layers is revealed to be a diffusion-controlled process with an activation energy of 0.95 eV. (C) 2011 The Electrochemical Society. [DOI: 10.1149/2.020201esl] All rights reserved.
Improved Barrier Properties of Ultrathin Ru Film with Tan Interlayer for Copper Metallization

XP Qu,JJ Tan,M Zhou,T Chen,Q Xie,GP Ru,BZ Li

DOI: https://doi.org/10.1063/1.2195112

IF: 4

2006-01-01

Applied Physics Letters

Abstract:The properties of ultrathin ruthenium (∼5nm)∕TaN(∼5nm) bilayer as the copper diffusion barrier are studied. Cu, Ru, and TaN thin films are deposited by using the ion beam sputtering technique. The experimental results show that the thermal stability of the Cu∕Ru∕TaN∕Si structure is much more improved than that of the Cu∕Ru∕Si structure, which should be attributed to the insertion of the amorphous TaN interlayer. The microstructure evolution of the Cu∕Ru∕TaN∕Si structure during annealing is also discussed. The results show that the Ru∕TaN bilayer can be a very promising diffusion barrier in the future seedless Cu interconnect technology.
Thermal Stability of Ultrathin RuC Film As Cu Diffusion Barrier

Shao-Feng Ding,Xie, Qi,Detavernier, Christophe,Xin-Ping Qu

DOI: https://doi.org/10.1109/icsict.2010.5667521

2010-01-01

Abstract:The properties of ultrathin RuC film and RuC/TaN stack as the Cu diffusion barrier on Si substrate were studied. The results show that the thermal stability of the Cu/RuC/TaN/Si structure is better than that of the Cu/Ru/TaN/Si structure. A flush TaN layer can improve the thermal stability of RuC film and make it a more robust diffusion barrier for Cu metallization.
Sputtered Ru–Ti, Ru–N and Ru–Ti–N Films As Cu Diffusion Barrier

Ji Li,Hai‐Sheng Lu,Yongwei Wang,Xin-Ping Qu

DOI: https://doi.org/10.1016/j.mee.2010.06.031

IF: 2.3

2011-01-01

Microelectronic Engineering

Abstract:Ultrathin Ru–Ti alloy, Ru–N and Ru–Ti–N films were fabricated as diffusion barriers to Cu metallization. The thermal stability, phase formation, surface morphology and atomic depth profile of the Cu/Ru–Ti(10 nm)/Si, Cu/Ru–N(10 nm)/Si and Cu/Ru–Ti–N(10 nm)/Si structures after annealing at different temperatures were investigated. Comparing to the single Ru layer, both N doping and Ti alloying improve the thermal stability and diffusion barrier properties to Cu. The Cu on the Ru–Ti layer has better morphology than Cu on the Ru–N layer, while the Ru–Ti–N layer has the best thermal stability and has great potential to be applied as a single layer diffusion barrier.
First-principles investigation of Cu/Ti-TM/Si (TM=W, Ru) interfaces: Role of Ti-TM binary alloys as diffusion barrier layers

Hai-Di Feng,Yan-Ting Xu,Qi Zhao,Ming Wen,Zong-Yan Zhao

DOI: https://doi.org/10.1016/j.mtcomm.2024.109359

IF: 3.8

2024-05-30

Materials Today Communications

Abstract:This study employs first-principles calculations to investigate the role of Ti-TM (TM=W, Ru) binary alloys as diffusion barrier layers in Cu/Ti-TM/Si interfaces, which are critical for enhancing the performance and reliability of microelectronic devices. The calculated results reveal that TiRu and Ti 4 W 12 alloys exhibit exceptional stability and low contact resistance, outperforming traditional Cu/Si interfaces. The introduction of these alloys into the interface structure results in a reduced Cu s-d coupling effect, which is pivotal for inhibiting Cu diffusion. Additionally, the presence of pseudogap features and enhanced electron distribution at the interface indicate strong atomic interactions, contributing to the formation of covalent bonds and further improving barrier properties. The findings suggest that TiRu and Ti 4 W 12 alloys are promising candidates for diffusion barrier layers, offering a balance of low contact resistance, thermal stability, and effective Cu diffusion inhibition. Therefore, from the results, it is concluded that the formation of the new interface structure will improve performance in various aspects, and thus the strategy can be applied in various directions, such as new energy materials, electronic materials, and so on. In addition, the combination of the previous work and the present work suggests that Ti-based alloys have the potential to be used as diffusion barrier materials.

materials science, multidisciplinary
Electrical Properties Study of Ni (Pt)-Silicide/si Contacts

Yifei Huang,Yu-Long Jiang,Guo-Ping Ru,Lu, Fang

DOI: https://doi.org/10.1109/icsict.2006.306305

2006-01-01

Abstract:The electrical properties of Ni (Pt)-silicide/Si contact is studied and it is revealed that the Schottky barrier contact obeys a complicated two Gauss distribution. It is demonstrated that the Pt interface layer can not only improve NiSi phase thermal stability but also improve contact homogeneity
Investigation of RuZn Alloy As Barrier to Cu Interconnect

Wang Peng,Qu Xin-Ping,Dordi Yezdi,Joi Aniruddha

DOI: https://doi.org/10.1007/s10854-022-07806-9

2022-01-01

Journal of Materials Science Materials in Electronics

Abstract:Ru is an excellent adhesion layer to copper and possible conductor material yet it has poor barrier properties and poor adhesion with SiO2. In this work, a novel self-formed barrier, RuZn with around 0.3 at.% Zn has been prepared by sputtering and following annealing. Its adhesion property with SiO2 and thermal stability are much improved. A very high average value of 42.42 J/m2 for the interface fracture energy between RuZn and SiO2 can be obtained through an improved four-point bending method. Results show that during the annealing, Zn from the RuZn migrates to the Ru/SiO2 interface and Zn2SiO4 forms at the Ru/SiO2 interface, which inhibits the diffusion of Cu as well as improves the adhesion.
The Inhibition of Enhanced Cu Oxidation on Ruthenium∕Diffusion Barrier Layers for Cu Interconnects by Carbon Alloying into Ru

Shao-Feng Ding,Qi Xie,Steve Mueeller,Thomas Waechtler,Hai-Sheng Lu,Stefan E. Schulz,Christophe Detavernier,Xin-Ping Qu,Thomas Gessner

DOI: https://doi.org/10.1149/2.041112jes

IF: 3.9

2011-01-01

Journal of The Electrochemical Society

Abstract:The inhibition of Cu oxidation by alloying C into the Ru/TaN barrier stack is investigated. By using in-situ XRD measurement, severe copper oxide formation was observed for the Cu/Ru/barrier system during annealing process in He atmosphere. This phenomenon is explained using thermodynamics from the viewpoint of Gibbs free energy of oxide formation. The Cu oxidation can be inhibited by alloying C into the Ru layer, and the more C content in the RuC layer, the more evident the inhibition effect. The RuC/TaN stack also shows better diffusion barrier properties than the Ru/TaN bi-layer. Atomic layer deposition of Cu2O on the RuC substrate was carried out and reduction of the Cu2O to Cu was observed. The mechanism of inhibition of Cu oxidation on C alloyed Ru was investigated by a first principles calculation based on the density functional theory. (C) 2011 The Electrochemical Society. [DOI: 10.1149/2.041112jes] All rights reserved.
Ultra-Thin Ru/TaN Bi-Layer as Diffusion Barrier to Seedless Copper Interconnect

Jingjing Tan,Mi Zhou,Tao Chen,Qi Xie,Guoping Ru,Xinping Qu

DOI: https://doi.org/10.3321/j.issn:0253-4177.2006.z1.050

2006-01-01

Abstract:The property of Ru/TaN bi-layer as diffusion barrier to copper interconnect is investigated. Ru/TaN and Cu/Ru/ TaN films are prepared by ion beam sputtering system without breaking the vacuum. Rapid thermal annealing is carried out in high purity N2 atmosphere. Sheet resistance measurement and X-ray diffraction show good thermal stability of the Ru/TaN bi-layer structure. Bias leakage current versus time measurement, which is very sensitive to mobile ions in the oxide, is also used to investigate the copper MOS structure. The direct copper electroplating on the Ru/TaN/Si structure is also carried out. The results show that the Ru/TaN bi-layer with good thermal stability and diffusion barrier property can be widely used in seedless copper interconnects.
The properties of Ru on Ta-based barriers

Jing-Jing Tan,Xin-Ping Qu,Qi Xie,Yi Zhou,Guo-Ping Ru

DOI: https://doi.org/10.1016/j.tsf.2005.09.129

IF: 2.1

2006-01-01

Thin Solid Films

Abstract:The properties for Ru/Ta and Ru/TaN bi-layer on Si substrate were investigated. The Ru, Ta and TaN films were deposited by ion beam sputtering technology and were annealed at temperatures ranging from 300 °C to 900 °C in high purity N2 ambient. The phase formation, microstructure evolution and thermal stability for the Ru/Ta/Si and Ru/TaN/Si structures were investigated. Results show that adding the Ta or TaN layer between Ru and Si delays the reaction of Ru with Si. The Ru/TaN bi-layer is more stable on Si and shows better diffusion barrier property than the Ru/Ta bi-layer.
Effects of Dissolved Nitrogen in Improving Barrier Properties of Ruthenium

M Damayanti,T Sritharan,SG Mhaisalkar,ZH Gan

DOI: https://doi.org/10.1063/1.2167610

IF: 4

2006-01-01

Applied Physics Letters

Abstract:Diffusion barrier properties of 10nm Ru sputtered in N and Ar atmospheres have been assessed. N was found to be dissolved in the Ru film deposited in N atmosphere making it amorphous with ten times higher sheet resistance. Annealing caused effusion of N resulting in crystallization of Ru and a sharp decrease in sheet resistance. The incorporation of N delayed the Ru silicide formation and reduced Cu and Ru diffusion into the SiO2 dielectric layer. These beneficial performances are attributed to dissolved N in the amorphous films and to N grain boundary stuffing in crystallized films.
Improved TiN film as a diffusion barrier between copper and silicon

Sa-Kyun Rha,Won-Jun Lee,Seung-Yun Lee,Yong-Sup Hwang,Yoon-Jik Lee,Dong-Il Kim,Dong-Won Kim,Soung-Soon Chun,Chong-Ook Park

DOI: https://doi.org/10.1016/s0040-6090(97)01077-8

IF: 2.1

1998-05-01

Thin Solid Films

Abstract:Reactively-sputtered TiN films were studied as a copper diffusion barrier in the Cu/TiN/Ti/Si and Cu/TiN/Ti/SiO2/Si multi-layer structures. From the viewpoint of the microstructure of TiN, the diffusion barrier property of TiN against copper improved when the grain boundary of TiN (as the diffusion path of copper) was extended and densified, which was confirmed by the increase of the breakdown temperature of the TiN diffusion barrier detected by various characterization methods. The 40-nm thick TiN with double deposition (extension of the grain boundary of TiN) and stuffing (the densification of the grain boundary of TiN) by RTP treatment (NH3, 600°C, 1 min) was found to be stable up to 575°C for 2 h by the C–V method.

materials science, multidisciplinary,physics, applied, condensed matter, coatings & films
XPS characterization of interfacial reaction between SiCOH low-k dielectric and TaN barrier layer

Lillian Zhu,Qingqing Sun,Hongliang Lü,Shijin Ding,Davidwei Zhang,LiKang Wang

2006-01-01

Abstract:For Cu interconnect processing for 90nm node and beyond, barrier layers play a very important role in low dielectric constant (low-k) material and copper. It can stop copper migrate into low-k and offer better adhesion to low-k as well. However, Interfacial properties between barrier and low-k dielectric should be carefully researched in order to obtain an excellent interconnect system. In this work, in a Transmission Electron Microscope (TEM) picture of low-k material (SiCOH) and TaN stack we can observe that TaN has a smooth interface with low-k and do not diffuse into low-k material. Moreover, with atomic force microscopy (AFM), we find the surface roughness of PVD TaN is satisfactory. Reactions between low-k material (SiCOH) and TaN barrier have been investigated with XPS. SiCOH low-k dielectric films are deposited by plasma-enhanced chemical vapor deposition (PECVD) and then TaN are deposited on it by physical vapor deposition (PVD). After annealing the stack under different temperatures (250°C, 350°C, 450°C), XPS is used to analyze the change happened on the interface. We fing that Ta-O and Ta-C peaks in the XPS spectrum of unannealed sample are obvious, and they have no significant difference when the annealing temperature getting higher. The result indicates that the main reactions between TaN barrier and low-k happen in the process of deposition and TaN is stable in a range of temperature (from 250°C to 450°C).
Low-Resistivity Ru-Ta-C Barriers for Cu Interconnects

J.S. Fang,J.H. Lin,B.Y. Chen,G.S. Chen,T.S. Chin

DOI: https://doi.org/10.1007/s11664-011-1797-4

IF: 2.1

2011-01-01

Journal of Electronic Materials

Abstract:Ru-Ta-C films deposited on silicon substrates were evaluated as barriers for copper metalization. The films were prepared by magnetron cosputtering using a Ru target and a Ta-C target. Compositions and structure of resultant films were optimally tuned by the respective deposition power of each target. The fabricated Ru-Ta-C films were characterized via four-point probe measurement, x-ray diffractometry, field-emission electron probe microanalysis, and transmission electron microscopy. Failure temperature was evaluated by the sudden rise in electrical resistivity after annealing the Cu/Ru-Ta-C/Si sandwich films, and a reference bilayer Cu/(5 nm Ru)/(5 nm Ta-C)/Si scheme. The optimal compositions were 10 nm Ru77Ta15C7 and (5 nm Ru)/(5 nm Ta-C), both of which showed failure temperature of 650°C for 30 min and electrical resistivity less than 150 μΩ cm. Because of their high thermal stability and low electrical resistivity, both Ru-Ta-C and Ru/Ta-C films are promising barriers for Cu metalization.

Improved barrier properties of Ru/TaSiN stack on NiSi/Si for copper contact technology

Improved diffusion barrier properties and NiSi thermal stability for the Cu contact with the Ru/TaSiN stack on NiSi/Si

Ru/TaSiN with different Ta/Si atomic ratio as barrier for Cu contact on NiSi substrate

Cu Contact on NiSi/Si with a Ru/TaN Barrier Stack

Cu contact on NiSi substrate with a Ta/TaN barrier stack

Cu Contact on NiSi/Si with Thin Ru/TaN Barrier

Comparison of Ru/Ta and Ru/TaN as Barrier Stack for Copper Metallization

Tan/Ta As an Effective Diffusion Barrier for Direct Contact of Copper and Nisi

Improved Barrier Properties of Ultrathin Ru Film with Tan Interlayer for Copper Metallization

Thermal Stability of Ultrathin RuC Film As Cu Diffusion Barrier

Sputtered Ru–Ti, Ru–N and Ru–Ti–N Films As Cu Diffusion Barrier

First-principles investigation of Cu/Ti-TM/Si (TM=W, Ru) interfaces: Role of Ti-TM binary alloys as diffusion barrier layers

Electrical Properties Study of Ni (Pt)-Silicide/si Contacts

Investigation of RuZn Alloy As Barrier to Cu Interconnect

The Inhibition of Enhanced Cu Oxidation on Ruthenium∕Diffusion Barrier Layers for Cu Interconnects by Carbon Alloying into Ru

Ultra-Thin Ru/TaN Bi-Layer as Diffusion Barrier to Seedless Copper Interconnect

The properties of Ru on Ta-based barriers

Effects of Dissolved Nitrogen in Improving Barrier Properties of Ruthenium

Improved TiN film as a diffusion barrier between copper and silicon

XPS characterization of interfacial reaction between SiCOH low-k dielectric and TaN barrier layer

Low-Resistivity Ru-Ta-C Barriers for Cu Interconnects