Design and implementation of monolithic millimeter wave low noise amplifiers

Pinpin Yan,Jixin Chen,Wei Hong

DOI: https://doi.org/10.3969/j.issn.1001-0505.2010.03.003

2010-01-01

Abstract:Two millimeter wave low noise amplifiers (LNA) are designed and implemented with an OMMIC 0.18 μm GaAs pHEMT(pseudomorphic high electron mobility transistor) process. The amplifiers are designed based on minimum noise measure, and a method of increasing bias current is adopted to improve the gain. Thus the LNA can obtain higher gain while keeping a low noise figure at a millimeter wave frequency band. The two-stage LNA uses series and parallel feedback in different stages to achieve flat gain. The three-stage LNA uses three series feedback stages to achieve high gain in the same chip size. The chip sizes of both the LNAs are 1.5 mm ×1.0 mm. In the frequency range of 28 to 40 GHz, the two-stage LNA achieves a maximum gain of 15.4dB and a minimum noise figure of 3.2 dB, and the three-stage LNA achieves a maximum gain of 24.8dB and a minimum noise figure of 2.73 dB. According to the test results, the amplifiers can operate well at 28 to 40 GHz.