Design of a 2.4/5.2 GHz Dual-Band Low-Noise Amplifier in 0.18 μm CMOS Progress

Yi-ou JING,Yong LI,Zong-sheng LAI,Ling SUN,Wei-ping JING
DOI: https://doi.org/10.3969/j.issn.1005-9490.2007.04.005
2007-01-01
Abstract:Based on 0.18 μm CMOS technology,a dual-band lownoise amplifier for WLAN application was implemented.By switching the power source and the output unit,the narrow-band gain and impedance matching were achieved at the 2.4 GHz and 5.2 GHz frequency bands.This circuit adopted traditional cascode structure and a simuluaneously input and noise impedance matching technique was used for noise optimization at the same time.The simulation results showed that the LNA exhibited a linear gain of 15.4 dB at 2.4 GHz and 12.5 dB at 5.2 GHz,noise figure of 2.3/2.9 dB,1 dB compress point of-12.5/-11.2 dBm and IIP3 of-4.7/-5.5 dBm separately.
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