60Ghz GaAs MMIC Low Noise Amplifier

Oupeng Li,Yuehang Xu,Yunchuan Guo,Lei Wang
DOI: https://doi.org/10.1109/icmmt.2012.6229981
2012-01-01
Abstract:In this paper, a monolithic V-band low noise amplifier (LNA) is presented by using 0.15μm gate length GaAs/InGaAs/AlGaAs pseudomorphic HEMT technology. The LNA is consisted by 4 stages 4×30μm gate width transistors. The total circuit achieves 2.2-2.7 dB noise figure with more than 16dB associate gain from 57GHz to 66GHz, and the saturation output power reaches 15dBm. The chip area is 2.1mm×1.5mm.
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