A broadband low noise amplifier MMIC in 0.15μm GaAs pHEMT technology

Bo Chen,Wen Huang,Guang Yang,Yunchuan Guo
DOI: https://doi.org/10.1109/ICMMT.2010.5524823
2010-01-01
Abstract:This paper describes the design and simulated performance of 18-40GHz MMIC low noise amplifier (LNA). A three stages amplifier has been designed and developed using 0.15um gate length GaAs/InGaAs/AlGaAs pHEMT technology. Self-biased and resistive matching technologies have been used to enhance the electrical specifications like return loss and gain flatness. The simulated data shows better than 3.1 dB of noise figure with an associated gain of more than 17.5 dB over the frequency band of 18-40 GHz. Over the range of 19-40 GHz, it could achieve better than 2 dB of noise figure with an associated gain of 22±2dB.
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