The Design of a Ka-band Low Noise Amplifier MMIC

YANG Zi-qiang,YANG Tao,LIU Yu
DOI: https://doi.org/10.3969/j.issn.1005-6122.2007.03.011
2007-01-01
Abstract:A Ka-band two-stage low noise amplifier(LNA) monolithic microwave integrated circuit(MMIC) has been developed.The gate width of the active device and the source series feedback are chosen carefully to minimize the distance between Γo and S*11,where Γo is the load impedance providing the minimum noise figure and S*11 is a conjugate reflection coefficient of S11,and then the LNA can achieve optimal noise match and conjugate match simultaneously.Also the source series feedback can increase the stability of the LNA.The amplifier that is fabricated by a commercial 0.18μm pseudomorphic high electron-mobility transistor(pHEMT) has achieved a gain of more than 10dB in the frequency range of 29 to 33 GHz and a noise figure of 2.3 dB at 30 GHz.The chip size is 1.4×0.9mm2.
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