Abstract:The formation of cracks is often observed in the epitaxial growth of ultrawide-bandgap aluminum nitride (AlN) semiconductor films on economical and versatile silicon (Si) substrates due to the significant differences in in-plane lattice parameters and thermal expansion coefficients between the film and the substrate, which hampers the development of template, buffer layer, and device structure with a relatively thick AlN layer for devices. The present study aims to elucidate the conditions of crack formation through a simple but comprehensive estimation of strain energy accumulation and relaxation by lattice strain, misfit dislocation density, and crack formation. Strain energy in the epitaxial film from lattice and thermal mismatches is evaluated by an elastic strain equation tailored to the epitaxy of the hexagonal crystal structure. The effects of temperature, thickness, and dislocation density on the lattice and dislocation strain energies of the film are also considered. Finally, the comparison in the changes in the total strain energy and cleavage energy with decreasing temperature shows that cleavage energy is higher than strain energy if the film is thinner than 400 nm but becomes lower than the strain energy if the film is thicker than 400 nm during cooldown, suggesting the crack formation, which matches well with experimental observations.

Strain relaxation mechanisms in AlGaN epitaxy on AlN templates

Different Strain Relief Behaviors in Al0.35ga0.65n/Gan Multiple Quantum Wells on Gan/Sapphire Templates with Aln/Gan Supperlattices and Low-Temperature Aln Interlayers

Plasma Assisted Molecular Beam Epitaxy Growth Mechanism of AlGaN Epilayers and Strain Relaxation on AlN Templates

High-Temperature Characteristics of Strain in AlGaN/GaN Heterostructures

Temperature dependence of strain in A1(X)Ga(1-X)N/GaN heterostructures

Anisotropic Strain Relaxation and High Quality AlGaN/GaN Heterostructures on Si (110) Substrates

Strain management and AlN crystal quality improvement with an alternating V/III ratio AlN superlattice

Strain Effects on InxAl1−xN Crystalline Quality Grown on GaN Templates by Metalorganic Chemical Vapor Deposition

Study on strain relaxation in AlGaN/GaN superlattices grown by metal-organic chemical vapor deposition

Microstructures And Strain Relaxation In Modulation-Doped Alxga1-Xn/Gan Heterostructures

Behaviors of AlGaN Strain Relaxation on a GaN Porous Structure Studied with d-Spacing Crystal Lattice Analysis

Strain relaxation in GaN grown on vicinal 4H-SiC(0001) substrates

Influence of Different Surface-Passivation Dielectrics on High-Temperature Strain Relaxation of AlGaN in AlGaN∕GaN Heterostructures

Microstructure and dislocation evolution in composition gradient AlGaN grown by MOCVD

Temperature dependence of strain in AlxGa1-xN/GaN heterostructures

Effects of Al Doping on Dislocation Inclinations and Strain of GaN Films on Si Substrates

Strain-stress study of AlxGa1-xN/AlN heterostructures on c-plane sapphire and related optical properties

The Origin and Evolution of V-defects in InxAl1−xN Epilayers Grown by Metalorganic Chemical Vapor Deposition

MICROSTRUCTURES AND STRAIN RELAXATION IN MODULATION-DOPED <font>Al</font><sub>x</sub><font>Ga</font><sub>1-x</sub><font>N</font>/<font>GaN</font> HETEROSTRUCTURES

Strain accumulation and relaxation on crack formation in epitaxial AlN film on Si (111) substrate

Temperature-dependent Strain Relaxation of the AlGaN Barrier in AlGaN∕GaN Heterostructures with and Without Si3N4 Surface Passivation