Abstract:This article investigates transient dose-rate effect (TDRE) on a high-speed comparator (SB9696), combining both experimental and simulation methods. Experimental results show that this comparator has two main kinds of transient responses under pulsed gamma-ray environment. First, when the total dose per pulse is less than 54.9 rad(Si), only a short disturbance appears and recovers within several microseconds. Second, when the total dose is beyond 399.6 rad(Si), the comparator is shortly interrupted and then recovers to an under-voltage operation state after several microseconds, and the under-voltage state has a long duration before recovering to a normal working state, which is an uncommon phenomenon that has not been found previously for comparators. A hypothesis is proposed that the short disturbance or interrupt is mainly caused by local photocurrents in the differential structure of the comparator, while the long under-voltage operation state is related to the global photocurrent with a long duration. Lastly, they are successfully verified by SPICE simulations. Simulation results indicate that the short disturbance or interrupt exactly results from local photocurrents in the differential pairs of the comparator’s output module, and, due to the rail-span collapse effect as the global photocurrent flows through power supply lines, the effective supply voltage of the comparator would decrease, thus resulting in a long under-voltage operation state.

Transient Radiation Induced Disturbance Duration Behavior of BiMOS Op-amp Output Due to Dose Rate

Analysis of Affecting Factors of Transient Ionizing Radiation Effects on BiMOS Op-amp by Orthogonal Design

A Stabilized Numerical Scheme to Simulate Synergistic Effect of TID and TDR in Semiconductor Devices

Experimental Study of Transient Ionizing Radiation Effects in Bipolar Operational Amplifier

Investigation of Transient Dose-Rate Effect on High-Speed Comparator SB9696

Study of Latch-Up Immunization in Bulk CMOS Integrated Circuits Exposed to Transient Ionizing Radiation

Radiation Effects on Mos and Bipolar Devices by 8 Mev Protons, 60 Mev Br Ions and 1 Mev Electrons

Influence of enhanced low dose rate sensitivity on single-event transient degradation in the LM158 bipolar operational amplifier

Investigation of Irradiation Effects and Model Parameter Extraction for VDMOS Field Effect Transistor Exposed to Gamma Rays

Total Ionizing Dose Radiation Effects on MOS Transistors with Different Layouts

Total Dose Effect on Mismatch Performance of 0.18 Μm MOS Differential Pair Transistors

Transient Radiation Effects in Several Types of LDO

Comparison of the Total Dose Responses of Fully Depleted SOI Nmosfets with Different Geometries for the Worst Case Bias Conditions

Experimental Study of Transient Dose Rate Effects of Two Level-Shifting Transceivers and Simulations on Their ESD Circuits

Impact of TID on the Transient Ionizing Irradiation Response of CMOS Circuits

Study on the Transient Ionization Radiation Damage Pattern of 0.18μm SRAM

Transient dose rate effects in silicon-germanium heterojunction bipolar transistors

TCAD Simulation Analysis of Vertical Parasitic Effect Induced by Pulsed Γ- Ray in NMOS from 180 Nm to 40 Nm Technology Nodes

Transient Dose Rate Effect Between System-in-Package and Printed Circuit Boards: A Comparative Experimental Study

Study of Total Ionizing Dose Radiation Effects on Enclosed Gate Transistors in A Commercial Cmos Technology

Study of the Dose Rate Effect of 180 Nm Nmosfets