Abstract:Amorphous SiOx（0≤x≤2.0）films were deposited at 300℃ by plasma-enhanced chemical vapor deposition（PECVD）using SiH4-O2 mixtures.The properties of infrared (IR) absorption for Si—O—Si bonds have been investigated.Two characteristic absorption peaks at around 1050 and 1150cm-1 arise from Si—O—Si stretching mode，and one absorption peak at around 800cm-1 from Si—O—Si bending mode.It is found that Isum/NSi ratio,of the sum of the absorption intensities for both 1000 and 1150cm-1 bands to the density of Si atoms increases linearly with x when x increasing from 0 to 2.0.The proportionality coefficient ASiO(inverse of the oscillator strength) of the Si—O—Si stretching mode is obtained to be 1.48×1019cm-2.On the other hand，the apparent absorbance αapp,in a-SiO2 films is found linear with the increasing film thickness d as αapp=kd,for both 800cm-1 and 1050cm-1 bands.The proportionality coefficients k for 800 and 1050cm-1 bands are obtained to be 3.2×103 and 2.9×104cm-1.By comparison with the values of k reported in other papers,it indicates that k value is closely related to the film density.With the values of ASiO and k above-mentroned,the O content in a-SiOx∶H and film thickness for a-SiO2 can be determined nondestructively using IR absorption techniques.

Calculation of Optical Band Gaps of A-Si:H Thin Films by Ellipsometry and Uv-Vis Spectrophotometry

A Study of PECVD Amorphous SiO2 Films Using Infrared Absorption Techniques

Plasma-Enhanced Vapor Deposition Amorphous SiOx∶H(0≤x≤2.0)Films by Infrared Absorption Spectroscopy

Study of plasma-deposited amorphous SiO2 films using infrared absorption techniques

Study on the optical properties of P-doped a-Si:H thin films by spectroscopic ellipsometry

Optical Properties Study of Silicon Oxynitride Films Deposited by RF Magnetron Sputtering

Thickness and Optical Constant Determination of Hydrogenated Amorphous Silicon Thin Film from Transmittance Spectra of Ellipsometer

Optical Properties of A-Si_(1-x)c_x:H Thin Films Deposited by RF-PECVD

Study on the Optical Property of P-C Doped A-Si:H Thin Films

Effect of Gas Pressure on the Optical Properties of n-Type a-Si: H Thin Films Deposited by PECVD

Structural and Optoelectronic Properties of A-Si:H: A New Analysis Based on Spectroscopic Ellipsometry

Effect of working gas pressure on the optical properties of RF-PECVD a-Si:H films

Optical Properties and Local Bonding Configurations of Hydrogenated Amorphous Silicon Nitride Thin Films

Structure and Properties of Hydrogenated Amorphous Silicon Carbide Thin Films Deposited by Pecvd

Structural and Photoelectronic Properties of A-Sige:H Thin Films with Varied Ge Prepared by PECVD

Effect of Substrate Temperature on the Optical Properties of A-Si:H Films by RF-PECVD

Effect of Technical Parameter on Optical Constants of Amorphous Silicon Thin Film

The influence of the growth conditions on the structural and optical properties of hydrogenated amorphous silicon carbide thin films

Process Investigation of A-Si : H Thin Films Prepared by Dc Magnetron Sputtering

Study of Hydrogenated Nanoamorphous Silicon(na-Si:H) Thin Film Prepared by RF Magnetron Sputtering for Graded Optical Band Gap ( E Opt G )

Effect of Nitrogen Doping on the Structure and Optical Properties of N-Type Hydrogenated Amorphous Silicon Thin Films